參數(shù)資料
型號(hào): PHT8N06
廠商: NXP Semiconductors N.V.
英文描述: TrenchMOS transistor Standard level FET
中文描述: TrenchMOS晶體管標(biāo)準(zhǔn)電平場(chǎng)效應(yīng)管
文件頁(yè)數(shù): 7/10頁(yè)
文件大?。?/td> 72K
代理商: PHT8N06
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
PHT8N06T
MOUNTING INSTRUCTIONS
Dimensions in mm.
Fig.18. soldering pattern for surface mounting SOT223.
PRINTED CIRCUIT BOARD
3.8
min
6.3
2.3
4.6
1.5
min
1.5
min
1.5
min
(3x)
December 1997
7
Rev 1.100
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHT8N06LT 制造商:NXP Semiconductors 功能描述:MOSFET N SOT-223 制造商:NXP Semiconductors 功能描述:MOSFET, N, SOT-223 制造商:NXP Semiconductors 功能描述:MOSFET, N, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:55V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:8.3W; ;RoHS Compliant: Yes
PHT8N06LT /T3 功能描述:MOSFET N-CH TRENCH 55V 7.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHT8N06LT,135 功能描述:MOSFET N-CH TRENCH 55V 7.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHT8N06LT 制造商:NXP Semiconductors 功能描述:MOSFET N SOT-223
PHT8N06LT.135 制造商:NXP Semiconductors 功能描述:MOSFET N REEL 4K