參數(shù)資料
型號： PHT8N06
廠商： NXP Semiconductors N.V.
英文描述： TrenchMOS transistor Standard level FET
中文描述： TrenchMOS晶體管標(biāo)準(zhǔn)電平場效應(yīng)管
文件頁數(shù)： 2/10頁
文件大小： 72K
代理商： PHT8N06
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
PHT8N06T
THERMAL RESISTANCES
SYMBOL
R
th j-sp
R
th j-amb
PARAMETER
From junction to solder point
From junction to ambient
CONDITIONS
Mounted on any PCB
Mounted on PCB of Fig.2
TYP.
12
-
MAX.
15
70
UNIT
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
55
50
2
1.2
-
-
-
-
16
TYP.
-
-
3
-
0.05
-
0.04
-
-
MAX.
-
-
4
-
10
100
1
10
-
UNIT
V
V
V
V
μ
A
μ
A
μ
A
μ
A
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 150C
I
DSS
Zero gate voltage drain current
V
DS
= 55 V; V
GS
= 0 V;
T
j
= 150C
I
GSS
Gate source leakage current
V
GS
=
±
10 V
T
j
= 150C
±
V
(BR)GSS
Gate-source breakdown
voltage
Drain-source on-state
resistance
I
G
=
±
1 mA;
R
DS(ON)
V
GS
= 10 V; I
D
= 5 A
-
-
65
-
80
148
m
m
T
j
= 150C
DYNAMIC CHARACTERISTICS
T
mb
= 25C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
Q
g(tot)
Total gate charge
Q
gs
Gate-source charge
Q
gd
Gate-drain (Miller) charge
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
CONDITIONS
V
DS
= 25 V; I
D
= 5 A; T
j
= 25C
I
D
= 7 A; V
DD
= 44 V; V
GS
= 10 V
MIN.
1
-
-
-
TYP.
-
13.5
2.5
5.5
MAX.
-
-
-
-
UNIT
S
nC
nC
nC
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
-
-
-
-
-
-
-
365
110
60
9
15
18
12
500
135
85
14
25
27
18
pF
pF
pF
ns
ns
ns
ns
V
DD
= 30 V; I
D
= 7 A;
V
GS
= 10 V; R
G
= 10
;
T
j
= 25C
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= -55 to 175C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
T
sp
= 25C
MIN.
-
TYP.
-
MAX.
7.5
UNIT
A
T
sp
= 25C
I
F
= 5 A; V
GS
= 0 V
I
F
= 5 A; -dI
/dt = 100 A/
μ
s;
V
GS
= -10 V; V
R
= 30 V
-
-
-
-
-
40
1.1
-
-
A
V
ns
μ
C
0.85
38
0.2
December 1997
2
Rev 1.100
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參數(shù)描述
PHT8N06LT 制造商:NXP Semiconductors 功能描述:MOSFET N SOT-223 制造商:NXP Semiconductors 功能描述:MOSFET, N, SOT-223 制造商:NXP Semiconductors 功能描述:MOSFET, N, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:55V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:8.3W; ;RoHS Compliant: Yes
PHT8N06LT /T3 功能描述:MOSFET N-CH TRENCH 55V 7.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHT8N06LT,135 功能描述:MOSFET N-CH TRENCH 55V 7.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHT8N06LT 制造商:NXP Semiconductors 功能描述:MOSFET N SOT-223
PHT8N06LT.135 制造商:NXP Semiconductors 功能描述:MOSFET N REEL 4K
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