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參數(shù)資料
| 型號： | PHB98N03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 75 A, 25 V, 0.0073 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 8/14頁 |
| 文件大小： | 287K |
| 代理商： | PHB98N03LT |
Philips Semiconductors
PHP/PHB/PHD98N03LT
N-channel enhancement mode field-effect transistor
Product data
Rev. 02 — 18 October 2001
8 of 14
9397 750 08726
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
°
C and 175
°
C; V
GS
= 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I
D
= 50 A; V
DD
= 15 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
03af06
0
20
40
60
80
0
0.4
0.8
1.2
V
SD
(V)
I
S
(A)
T
j
= 25 oC
175 oC
V
GS
= 0 V
03af08
0
2
4
6
8
10
0
40
80
120
Q
G
(nC)
V
GS
(V)
I
D
= 50 A
T
j
= 25 oC
V
DD
= 15 V
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