參數(shù)資料
型號(hào): PHB98N03LT
廠商: NXP SEMICONDUCTORS
元件分類(lèi): JFETs
英文描述: N-channel enhancement mode field-effect transistor
中文描述: 75 A, 25 V, 0.0073 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁(yè)數(shù): 3/14頁(yè)
文件大?。?/td> 287K
代理商: PHB98N03LT
Philips Semiconductors
PHP/PHB/PHD98N03LT
N-channel enhancement mode field-effect transistor
Product data
Rev. 02 — 18 October 2001
3 of 14
9397 750 08726
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
°
C; I
DM
is single pulse
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa16
0
40
80
120
0
50
100
150
200
T
mb
(
o
C)
P
der
(%)
03af00
0
40
80
120
0
50
100
150
200
T
mb
(oC)
I
der
(%)
P
der
P
tot 25 C
°
)
----------------------
100
%
×
=
I
der
I
D 25 C
°
)
------------------
100
%
×
=
03af02
1
10
102
103
1
10
102
V
DS
(V)
I
D
(A)
DC
100 ms
10 ms
R
DSon
= V
DS
/ I
D
1 ms
t
p
= 10 μs
100 μs
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