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參數(shù)資料
| 型號(hào)： | PHB98N03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 75 A, 25 V, 0.0073 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁(yè)數(shù)： | 6/14頁(yè) |
| 文件大?。?/td> | 287K |
| 代理商： | PHB98N03LT |
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Philips Semiconductors
PHP/PHB/PHD98N03LT
N-channel enhancement mode field-effect transistor
Product data
Rev. 02 — 18 October 2001
6 of 14
9397 750 08726
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 175
°
C; V
DS
> I
D
x R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03af03
0
20
40
60
80
I
D
(A)
0
0.2
0.4
0.6
0.8
1
V
DS
(V)
2.5 V
5 V
T
j
= 25 oC
V
GS
= 2 V
10 V
3 V
3.5 V
03af05
0
20
40
60
80
0
1
2
3
4
V
GS
(V)
I
D
(A)
V
DS
> I
D
x R
DSon
T
j
= 25 oC
175 oC
03af04
0
0.005
0.01
0.015
0.02
0
20
40
60
80
I
D
(A)
R
DSon
(
)
V
GS
= 3 V
T
j
= 25 oC
5V
10 V
3.5 V
03af18
0
0.4
0.8
1.2
1.6
2
-60
0
60
120
180
T
j
(oC)
a
a
R
DSon 25 C
°
)
---------------------------
=
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