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參數(shù)資料
| 型號(hào)： | PHB98N03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 75 A, 25 V, 0.0073 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁(yè)數(shù)： | 4/14頁(yè) |
| 文件大小： | 287K |
| 代理商： | PHB98N03LT |
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Philips Semiconductors
PHP/PHB/PHD98N03LT
N-channel enhancement mode field-effect transistor
Product data
Rev. 02 — 18 October 2001
4 of 14
9397 750 08726
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Symbol Parameter
R
th(j-mb)
thermal resistance from junction to mounting
base
R
th(j-a)
thermal resistance from junction to ambient
Thermal characteristics
Conditions
Figure 4
Value
1.35
Unit
K/W
vertical in still air; SOT78 package
mounted on a printed circuit board; minimum
footprint; SOT404 and SOT428 packages
60
50
K/W
K/W
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
03af01
10-3
10-2
10-1
1
10
10-5
10-4
10-3
10-2
10-1
1
10
t
p
(s)
Z
th(j-mb)
(K/W)
single pulse
δ
= 0.5
0.2
0.1
0.05
0.02
tp
tp
T
T
P
t
δ
=
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