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參數(shù)資料
| 型號(hào)： | PH28F128W18BD60A |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 8M X 16 FLASH 1.8V PROM, 60 ns, PBGA56 |
| 封裝： | 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-56 |
| 文件頁(yè)數(shù)： | 49/106頁(yè) |
| 文件大?。?/td> | 1496K |
| 代理商： | PH28F128W18BD60A |
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Intel
Wireless Flash Memory (W18)
Datasheet
Intel Wireless Flash Memory (W18)
07-Dec-2005
Order Number: 290701, Revision: 015
47
7.2
Erase and Program Times
Table 15.
Erase and Program Times
Operation
Symbol
Parameter
Description (1)
Notes
VPP1
VPP2
Unit
Typ
Max
Typ
Max
Erasing and Suspending
Erase Time
W500
tERS/PB
4-Kword Parameter Block
0.3
2.5
0.25
2.5
s
W501
tERS/MB
32-Kword Main Block
0.7
4
0.4
4
s
Suspend
Latency
W600
tSUSP/P
Program Suspend
5
10
5
10
s
W601
tSUSP/E
Erase Suspend
5
20
5
20
s
Programming
Program
Time
W200
tPROG/W
Single Word
12
150
8
130
s
W201
tPROG/PB
4-Kword Parameter Block
0.05
.23
0.03
0.07
s
W202
tPROG/MB
32-Kword Main Block
0.4
1.8
0.24
0.6
s
Enhanced Factory Programming
(5)
Program
W400
tEFP/W
Single Word
N/A
3.1
16
s
W401
tEFP/PB
4-Kword Parameter Block
N/A
-
15
-
ms
W402
tEFP/MB
32-Kword Main Block
N/A
-
120
-
ms
Operation
Latency
W403
tEFP/SETUP
EFP Setup
-
N/A
-
5
s
W404
tEFP/TRAN
Program to Verify Transition
N/A
2.7
5.6
s
W405
tEFP/VERIFY
Verify
N/A
1.7
130
s
Notes:
1.
Unless noted otherwise, all parameters are measured at TA = +25 °C and nominal voltages, and they are sampled, not
100% tested.
2.
Excludes external system-level overhead.
3.
Exact results may vary based on system overhead.
4.
W400-Typ is the calculated delay for a single programming pulse. W400-Max includes the delay when programming
within a new word-line.
5.
Some EFP performance degradation may occur if block cycling exceeds 10.
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