參數(shù)資料
型號： PF48F4400P0VBQ0
廠商： INTEL CORP
元件分類： PROM
英文描述： Intel StrataFlash Embedded Memory
中文描述： 32M X 16 FLASH 1.8V PROM, 88 ns, PBGA88
封裝： 8 X 11 MM, 1.20 MM HEIGHT, LEAD FREE, SCSP-88
文件頁數(shù)： 95/102頁
文件大?。?/td> 1609K
代理商： PF48F4400P0VBQ0
1-Gbit P30 Family
Datasheet
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
95
C.3
CFI Query Identification String
The Identification String provides verification that the component supports the Common Flash
Interface specification. It also indicates the specification version and supported vendor-specified
command set(s).
Table 34.
CFI Identification
Table 35.
System Interface Information
Offset
Length
Description
Add.
10:
11:
12:
13:
14:
15:
16:
17:
18:
19:
1A:
Hex
Code
--51
--52
--59
--01
--00
--0A
--01
--00
--00
--00
--00
Value
"Q"
"R"
"Y"
10h
3
Query-unique ASCII string “QRY“
13h
2
Primary vendor command set and control interface ID code.
16-bit ID code for vendor-specified algorithms
Extended Query Table primary algorithm address
15h
2
17h
2
Alternate vendor command set and control interface ID code.
0000h means no second vendor-specified algorithm exists
Secondary algorithm Extended Query Table address.
0000h means none exists
19h
2
Offset
Length
Description
Add.
1B:
Hex
Code
--17
Value
1.7V
1Bh
1
1Ch
1
1C:
--20
2.0V
1Dh
1
1D:
--85
8.5V
1Eh
1
1E:
--95
9.5V
1Fh
20h
21h
22h
23h
24h
25h
26h
1
1
1
1
1
1
1
1
“n” such that typical single word program time-out = 2
n
μ-sec
“n” such that typical max. buffer write time-out = 2
n
μ-sec
“n” such that typical block erase time-out = 2
n
m-sec
“n” such that typical full chip erase time-out = 2
n
m-sec
“n” such that maximum word program time-out = 2
n
times typical
“n” such that maximum buffer write time-out = 2
n
times typical
“n” such that maximum block erase time-out = 2
n
times typical
“n” such that maximum chip erase time-out = 2
n
times typical
1F:
20:
21:
22:
23:
24:
25:
26:
--08
--09
--0A
--00
--01
--01
--02
--00
256μs
512μs
1s
NA
512μs
1024μs
4s
NA
V
PP
[programming] supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
V
PP
[programming] supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
V
CC
logic supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
V
CC
logic supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PF48F4400P0VBQ0A 功能描述:IC FLASH 512MBIT 85NS 88TPBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
PF48F4400P0VBQ2E 制造商:Micron Technology Inc 功能描述:32MX16 NOR FLASH PLASTIC PBF TFBGA 1.8V - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 512MBIT 85NS TFBGA
PF48F4400P0VBQ2F 制造商:Micron Technology Inc 功能描述:32MX16 NOR FLASH PLASTIC PBF TFBGA 1.8V - Tape and Reel
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PF48F4400P0VBQE3 功能描述:IC FLASH 512MBIT 100NS 88SCSP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Axcell™ 標準包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040
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