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參數(shù)資料
| 型號： | PF48F4400P0VBQ0 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | Intel StrataFlash Embedded Memory |
| 中文描述： | 32M X 16 FLASH 1.8V PROM, 88 ns, PBGA88 |
| 封裝： | 8 X 11 MM, 1.20 MM HEIGHT, LEAD FREE, SCSP-88 |
| 文件頁數(shù)： | 68/102頁 |
| 文件大?。?/td> | 1609K |
| 代理商： | PF48F4400P0VBQ0 |
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1-Gbit P30 Family
April 2005
68
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
Datasheet
To read data from the device (other than an erase-suspended block), the Read Array command must
be issued. During Erase Suspend, a Program command can be issued to any block other than the
erase-suspended block. Block erase cannot resume until program operations initiated during erase
suspend complete. Read Array, Read Status Register, Read Device Identifier, CFI Query, and Erase
Resume are valid commands during Erase Suspend. Additionally, Clear Status Register, Program,
Program Suspend, Block Lock, Block Unlock, and Block Lock-Down are valid commands during
Erase Suspend.
During an erase suspend, deasserting CE# places the device in standby, reducing active current.
V
PP
must remain at a valid level, and WP# must remain unchanged while in erase suspend. If
RST# is asserted, the device is reset.
12.3
Erase Resume
The Erase Resume command instructs the device to continue erasing, and automatically clears
status register bits SR[7,6]. This command can be written to any address. If status register error bits
are set, the Status Register should be cleared before issuing the next instruction. RST# must remain
deasserted (see
Figure 41, “Program Suspend/Resume Flowchart” on page 86
).
12.4
Erase Protection
When V
PP
= V
IL
, absolute hardware erase protection is provided for all device blocks. If V
PP
is
below V
PPLK
, erase operations halt and SR[3] is set indicating a V
PP
-level error.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| PF48F4400P0VBQ0A | 功能描述:IC FLASH 512MBIT 85NS 88TPBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| PF48F4400P0VBQ2E | 制造商:Micron Technology Inc 功能描述:32MX16 NOR FLASH PLASTIC PBF TFBGA 1.8V - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 512MBIT 85NS TFBGA |
| PF48F4400P0VBQ2F | 制造商:Micron Technology Inc 功能描述:32MX16 NOR FLASH PLASTIC PBF TFBGA 1.8V - Tape and Reel |
| PF48F4400P0VBQE0 | 功能描述:IC FLASH 512MBIT 100NS 88SCSP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Axcell™ 標準包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
| PF48F4400P0VBQE3 | 功能描述:IC FLASH 512MBIT 100NS 88SCSP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Axcell™ 標準包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
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