參數(shù)資料
型號: PF48F0P0ZBQ0
廠商: Intel Corp.
英文描述: Intel StrataFlash Embedded Memory
中文描述: 英特爾StrataFlash嵌入式存儲器
文件頁數(shù): 8/102頁
文件大?。?/td> 1609K
代理商: PF48F0P0ZBQ0
1-Gbit P30 Family
April 2005
8
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
Datasheet
1.3
Conventions
RFU :
Reserved for Future Use
SR :
Status Register
WSM :
Write State Machine
VCC :
Signal or voltage connection
V
CC
:
0x :
Signal or voltage level
Hexadecimal number prefix
0b :
Binary number prefix
SR[4] :
Denotes an individual register bit.
A[15:0] :
Denotes a group of similarly named signals, such as address
or data bus.
A5 :
Denotes one element of a signal group membership, such as
an individual address bit.
Bit :
Binary unit
Byte :
Eight bits
Word :
Two bytes, or sixteen bits
Kbit :
1024 bits
KByte :
1024 bytes
KWord :
1024 words
Mbit :
1,048,576 bits
MByte :
1,048,576 bytes
MWord :
1,048,576 words
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PF48F0P0ZT00 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
PF48F0P0ZTQ0 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
PF48F2000P0ZBQ0 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
PF48F2000P0ZBQ0A 功能描述:IC FLASH 64MBIT 85NS 88TPBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步,DDR II 存儲容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ
PF48F2000P0ZTQ0 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:Numonyx StrataFlash Embedded Memory