
Analog Integrated Circuit Device Data
8
Freescale Semiconductor
33899
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
CURRENT SENSE (CONTINUED)
Current Sense Saturation Voltage
FWD = 5.0V, REV = 0V; Then FWD = 0V, REV = 5.0V, RCSNS= 10kΩ
VCSNS_SAT
VCC -0.2
–
VCC +0.2
V
High Side Current Limit
DI Bit 4 and Bit 3 = 00
DI Bit 4 and Bit 3 = 01
(5)DI Bit 4 and Bit 3 = 10
(5)DI Bit 4 and Bit 3 = 11
(5)IHSLIM
5.8
7.2
8.0
10.0
–
10.2
11.9
13.5
17.9
A
Low Side Current Limit
DI Bit 4 and Bit 3 = 00
DI Bit 4 and Bit 3 = 01
DI Bit 4 and Bit 3 = 10
DI Bit 4 and Bit 3 = 11
ILSLIM
5.3
6.4
7.4
10.0
–
8.8
10.0
11.2
15.0
A
Low Side Current Limit Comparator
DI Bit 4 and Bit 3 = 00
DI Bit 4 and Bit 3 = 01
DI Bit 4 and Bit 3 = 10
DI Bit 4 and Bit 3 = 11
ILSCMP
3.2
4.2
5.0
7.5
–
5.2
6.4
7.5
10.6
A
Current Limit Current Comparator Differential
DI Bit 4 and Bit 3 = 00
DI Bit 4 and Bit 3 = 01
DI Bit 4 and Bit 3 = 10
DI Bit 4 and Bit 3 = 11
ICURLIM-
ILSCMP
1.0
3.0
–
A
LSCMP Output Voltage
IOL = 100μA
VLSCMP_OL
VLSCMP_OH
–
VDDQ-0.5
–
0.1
VDDQ
V
REDIS Current
Pull-up Current Source
Pull-down Current Sink
IREDIS_sc
IREDIS_sk
-160
1.0
–
-70
5.0
μA
mA
REDIS Threshold
Voltage Where Low Side MOSFET Turns On
Voltage Where Low Side MOSFET Turns Of
f(7)VREDIS_THR
3.6
3.35
0.15
–
4.4
4.15
0.35
V
THERMAL
TLIM
157.5
–
172.5
°C
THYS
3.0
–
10
°C
Temperature Warning
(6), SPI Bits = 01
TWARN
132.5
–
147.5
°C
TWARN(HYS)
3.0
–
10
°C
Notes
5.
Production test at 125
°C is at VIGNP = 6V. Operation to 26.5V is guaranteed by design.
6.
Guaranteed by characterization, not production tested.
7.
Design Information, not production tested.
Table 3. Static Electrical Characteristics (continued)
Characteristics at -40
°C ≤ TJ ≤ +150°C, 4.75V ≤ VCC ≤ 5.25V, 3.14V ≤ VCCL ≤ 3.47V, 2.97V ≤ VDDQ ≤ 5.25V,
6.0V
≤ VIGNP ≤ 26.5V, unless otherwise noted. Typical values reflect the approximate parameter means at TA = 25°C under
nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit