
Analog Integrated Circuit Device Data
Freescale Semiconductor
7
33899
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
CONTROL INPUTS (CONTINUED)
Input Leakage Current—Digital Inputs
SCLK, DI: VIN = 0V
IIN
-5.0
–
5.0
μA
Input Bias Current
EN1, EN2, FWD, REV, PWM: VIN = 5.0V
CS
: VIN = 0V
IDWN
IUP
27
-70
–
70
-27
μA
DATA OUTPUT
Data Output Low Voltage
IOL = 1.6mA
VDO_OL
–
0.4
V
Data Output High Voltage
IOH = -800μA
VDO_OH
VDDQ - 0.5
–
V
Data Out Tri-state Leakage
ILEAK
-5.0
–
5.0
μA
POWER OUTPUT
Breakdown Voltage
S0, S1, VIGNP: I = 20mA
VBVDSS
40
–
V
ON-Resistance (Each Output FET)
IOUT = 3.5A, VIGNP = 6.0V
RDS(ON)
–
165
m
Ω
Body Diode Forward Voltage (All 4 Output Diode
s)(6)ENx = 0V, IOUT = 3.0A, TJ = 150°C
ENx = 0V, IOUT = 3.0A, TJ = 23°C
ENx = 0V, IOUT = 3.0A, TJ = -40°C
VF
–
1.0
1.4
1.8
V
OFF-State Output Bias
VCC = 5.0V, EN1 = EN2 = 0V, S0 Shorted to S1 (Through Motor)
VBIAS
0.2 VCC
–
0.6 VCC
V
OFF-state Output Leakage (between SO and S1)
VCC = 0V, EN1 = EN2 = 0V, RL = 600Ω, VIGN = 16V
VCC = 5.0V, EN1 = EN2 = 0V, RL = 600Ω, VIGN = 18V
ILEAK
–
100
μA
Fault Threshold (OFF State) (EN1 = EN2 = 0V)
Measured at S1
Measured at S0
VFAULT_THR1
VFAULT_THR2
0.45 VCC
0.15 VCC
–
0.60 VCC
0.35 VCC
V
CURRENT SENSE
Current Sense Zero
FWD = 5.0V, REV = 0V; Then FWD = 0V, REV = 5.0V, IS1/S0 = 0A
ICSZ
–
0.2
mA
Current Sense Ratio: kCSNS = IS1/S0 / ICS
(FWD = 5.0V, REV = 0V; and FWD = 0V, REV = 5.0V)
IS1/S0 = -0.4A
IS1/S0 = -1.6A
IS1/S0 = -6.0A
kCSNS
250
340
–
400
500
435
–
Table 3. Static Electrical Characteristics (continued)
Characteristics at -40
°C ≤ TJ ≤ +150°C, 4.75V ≤ VCC ≤ 5.25V, 3.14V ≤ VCCL ≤ 3.47V, 2.97V ≤ VDDQ ≤ 5.25V,
6.0V
≤ VIGNP ≤ 26.5V, unless otherwise noted. Typical values reflect the approximate parameter means at TA = 25°C under
nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit