參數(shù)資料
型號： PC28F320J3C-150
廠商： Intel Corp.
英文描述： Intel StrataFlash Memory (J3)
中文描述： 英特爾StrataFlash存儲器（J3）
文件頁數(shù)： 5/72頁
文件大小： 905K
代理商： PC28F320J3C-150
Datasheet
5
Contents
Revision History
Date of
Revision
Version
Description
07/07/99
-001
Original Version
08/03/99
-002
A
0
–A
2
indicated on block diagram
Changed Minimum Block Erase time,I
OL
, I
OH
, Page Mode and Byte Mode
currents. Modified RP# on
AC Waveform for Write Operations
09/07/99
-003
12/16/99
-004
Changed Block Erase time and t
AVWH
Removed all references to 5 V I/O operation
Corrected
Ordering Information
, Valid Combinations entries
Changed Min program time to 211 μs
Added DU to Lead Descriptions table
Changed Chip Scale Package to Ball Grid Array Package
Changed default read mode to page mode
Removed erase queuing from Figure 10,
Block Erase Flowchart
03/16/00
-005
Added Program Max time
Added Erase Max time
Added Max page mode read current
Moved tables to correspond with sections
Fixed typographical errors in ordering information and DC parameter table
Removed V
CCQ1
setting and changed V
CCQ2/3
to V
CCQ1/2
Added recommended resister value for STS pin
Change operation temperature range
Removed note that rp# could go to 14 V
Removed V
OL
of 0.45 V; Removed V
OH
of 2.4 V
Updated I
CCR
Typ values
Added Max lock-bit program and lock times
Added note on max measurements
06/26/00
-006
Updated cover sheet statement of 700 million units to one billion
Corrected Table 10 to show correct maximum program times
Corrected error in Max block program time in section 6.7
Corrected typical erase time in section 6.7
2/15/01
-007
Updated cover page to reflect 100K minimum erase cycles
Updated cover page to reflect 110 ns 32M read speed
Removed Set Read Configuration command from Table 4
Updated Table 8 to reflect reserved bits are 1-7; not 2-7
Updated Table 16 bit 2 definition from R to PSS
Changed V
Max voltage from 0.8 V to 2.0 V, Section 6.4,
DC
Characteristics
Updated 32Mbit Read Parameters R1, R2 and R3 to reflect 110ns, Section 6.5,
AC Characteristics–Read-Only Operations
Updated write parameter W13 (t
WHRL
) from 90 ns to 500 ns, Section 6.6,
AC
Characteristics–Write Operations
Updated Max. Program Suspend Latency W16 (t
) from 30 to 75 μs,
Block Erase, Program, and Lock-Bit Configuration Performance
(1,2,3)
04/13/01
-008
Revised Section 7.0,
Ordering Information
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參數(shù)描述
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PC28F320J3D75A 功能描述:IC FLASH 32MBIT 75NS 64EZBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
PC28F320J3D75B 功能描述:IC FLASH 32MBIT 75NS 64EZBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
PC28F320J3D75D 功能描述:IC FLASH 32MBIT 75NS 64EZBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
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