參數(shù)資料
型號: PBSS4350T
英文描述: TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2A I(C) | SOT-23
中文描述: 晶體管 | BJT | NPN | 50V V(BR)CEO | 2A I(C) | SOT-23
文件頁數(shù): 12/12頁
文件大?。?/td> 72K
代理商: PBSS4350T
Koninklijke Philips Electronics N.V. 2003
SCA75
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Philips Semiconductors – a worldwide company
Contact information
For additional information please visit
http://www.semiconductors.philips.com
.
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sales.addresses@www.semiconductors.philips.com
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Fax:
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Printed in The Netherlands
613514/01/pp
12
Date of release:
2003 Jan 30
Document order number:
9397 750 10782
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PBSS4350T T/R 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PBSS4350T,215 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PBSS4350T215 制造商:NXP Semiconductors 功能描述:BISS TRANSISTOR NPN 50V 2A 3-SOT-23
PBSS4350X 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-89 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, SOT-89 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:550mW; DC Collector Current:3A; DC Current Gain hFE:300; Operating Temperature Min:-65C; Operating Temperature Max:150C;;RoHS Compliant: Yes 制造商:NXP Semiconductors 功能描述:NPN Transistor 3A SOT89,PBSS4350X
PBSS4350X /T3 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-11 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2