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參數(shù)資料
| 型號(hào)： | NTR4101PT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | Trench Power MOSFET −20 V, Single P−Channel, SOT−23 |
| 中文描述： | 1800 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | LEAD FREE, TO-236, CASE 318-08, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 56K |
| 代理商： | NTR4101PT1G |
Semiconductor Components Industries, LLC, 2004
October, 2004 Rev. 3
1
Publication Order Number:
NTR4101P/D
NTR4101P
Trench Power MOSFET
20 V, Single PChannel, SOT23
Features
Leading 20 V Trench for Low R
DS(on)
1.8 V Rated for Low Voltage Gate Drive
SOT23 Surface Mount for Small Footprint
PbFree Package is Available
Applications
Load/Power Management for Portables
Load/Power Management for Computing
Charging Circuits and Battery Protection
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
GS
I
D
20
V
GatetoSource Voltage
±
8.0
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= 25
°
C
2.4
A
1.7
t
≤
10 s
3.2
Power Dissipation
(Note 1)
Steady
State
P
D
0.73
W
t
≤
10 s
1.25
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
I
D
1.8
A
1.3
Power Dissipation
(Note 2)
P
D
0.42
W
Pulsed Drain Current
tp = 10 s
I
DM
ESD
7.5
A
ESD Capability (Note 3)
C = 100 pF,
RS = 1500
225
V
Operating Junction and Storage Temperature
T
J
,
T
STG
I
S
T
L
55 to
150
°
C
Source Current (Body Diode)
2.4
A
Lead Temperature for Soldering
Purposes (1/8” from case for 10 s)
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
JunctiontoAmbient Steady State (Note 1)
R
JA
170
°
C/W
JunctiontoAmbient t < 10 s (Note 1)
R
JA
100
JunctiontoAmbient Steady State (Note 2)
R
JA
300
1. Surfacemounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)
2. Surfacemounted on FR4 board using the minimum recommended pad size.
3. ESD Rating Information: HBM Class 0
S
G
D
Device
Package
Shipping
ORDERING INFORMATION
NTR4101PT1
SOT23
3000/Tape & Reel
PChannel MOSFET
SOT23
CASE 318
STYLE 21
W
TR4
TR4
W
= Device Code
= Work Week
MARKING DIAGRAM &
PIN ASSIGNMENT
3
Drain
1
Gate
2
1
3
2
Source
NTR4101PT1G
SOT23
PbFree
3000/Tape & Reel
V
(BR)DSS
R
DS(ON)
TYP
I
D
MAX
20 V
70 m @ 4.5 V
90 m @ 2.5 V
112 m @ 1.8 V
3.2 A
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTR4101PT1G-CUT TAPE | 制造商:ON 功能描述:NTR Series P-Channel 20 V 70 mOhm 0.73 W SMT Trench Power MOSFET - SOT-23 |
| NTR4101PT1H | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTR4170N | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Power MOSFET 30 V, 3.2 A, Single N−Channel, SOT−23 |
| NTR4170NT1G | 功能描述:MOSFET NFET SOT23 30V 4A TR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTR4170NT3G | 功能描述:MOSFET NFET SOT23 30V 4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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