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參數(shù)資料
| 型號(hào)： | NTR4501N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 20V, 3.2A, Single N Channel, SOT23(20V, 3.2A雙功率MOSFET) |
| 中文描述： | 功率MOSFET 20V的，3.2A，單N通道，SOT23封裝（20V的，3.2A雙功率MOSFET的） |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 63K |
| 代理商： | NTR4501N |
Semiconductor Components Industries, LLC, 2007
January, 2007 Rev. 6
1
Publication Order Number:
NTR4501N/D
NTR4501N
Power MOSFET
20 V, 3.2 A, Single NChannel, SOT23
Features
Leading Planar Technology for Low Gate Charge / Fast Switching
2.5 V Rated for Low Voltage Gate Drive
SOT23 Surface Mount for Small Footprint
PbFree Packages are Available
Applications
Load/Power Switch for Portables
Load/Power Switch for Computing
DCDC Conversion
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
20
V
GatetoSource Voltage
V
GS
±
12
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
I
D
3.2
A
T
A
= 85
°
C
2.4
A
Steady State Power
Dissipation (Note 1)
Steady State
P
D
1.25
W
Pulsed Drain Current
t
p
= 10 s
I
DM
10.0
A
Operating Junction and Storage Temperature
T
J
,
T
stg
55 to
150
°
C
Continuous Source Current (Body Diode)
I
S
1.6
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
JunctiontoAmbient (Note 1)
R
JA
100
°
C/W
JunctiontoAmbient (Note 2)
R
JA
300
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surfacemounted on FR4 board using the minimum recommended pad size.
G
D
S
Device
Package
Shipping
ORDERING INFORMATION
NTR4501NT1
SOT23
3000/Tape & Reel
20 V
85 m @ 2.5 V
70 m @ 4.5 V
R
DS(on)
Typ
3.6 A
I
D
Max
(Note 1)
V
(BR)DSS
SOT23
CASE 318
STYLE 21
MARKING DIAGRAM &
PIN ASSIGNMENT
2
1
3
NChannel
NTR4501NT3
SOT23
10,000/Tape & Reel
3.1 A
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NTR4501NT1G
SOT23
(PbFree)
3000/Tape & Reel
NTR4501NT3G
10,000/Tape & Reel
SOT23
(PbFree)
TR1
M
= Device Code
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
3
Drain
1
Gate
2
Source
TR1 M
http://onsemi.com
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| NTR4501NST1G | 制造商:ON Semiconductor 功能描述:NFET SOT23 20V 3.2A 80MO - Tape and Reel 制造商:ON Semiconductor 功能描述:MOSFET NFET SOT23 20V 3.2A 80MO 制造商:ON Semiconductor 功能描述:REEL / NFET SOT23 20V 3.2A 80MO |
| NTR4501NT1 | 功能描述:MOSFET 20V 3.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTR4501NT1G | 功能描述:MOSFET 20V 3.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTR4501NT1G-CUT TAPE | 制造商:ON 功能描述:NTR Series N-Channel 20 V 70 mOhm 1.25 W Surface Mount Power MOSFET - SOT-23 |
| NTR4501NT3 | 功能描述:MOSFET 20V 3.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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