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參數(shù)資料
| 型號(hào)： | NTS2101P |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 8.0V, 1.4A, Single P Channel, SC70(8.0V，1.4A雙功率MOSFET) |
| 中文描述： | 功率MOSFET 8.0V，具有1.4A，單P通道，采用SC70（8.0V，1.4A的雙功率MOSFET的） |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 130K |
| 代理商： | NTS2101P |
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 1
1
Publication Order Number:
NTS2101P/D
NTS2101P
Power MOSFET
8.0 V,
1.4 A, Single P
Channel, SC
70
Features
Leading Trench Technology for Low R
DS(on)
Extending Battery Life
1.8 V Rated for Low Voltage Gate Drive
SC
70 Surface Mount for Small Footprint (2 x 2 mm)
Pb
Free Package is Available
Applications
High Side Load Switch
Charging Circuit
Single Cell Battery Applications such as Cell Phones,
Digital Cameras, PDAs, etc.
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Units
Drain
to
Source Voltage
V
DSS
8.0
V
Gate
to
Source Voltage
V
GS
±
8.0
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
T
A
= 70
°
C
T
A
= 25
°
C
T
A
= 25
°
C
I
D
1.4
A
1.1
t
≤
5 s
1.5
A
Power Dissipation
(Note 1)
Steady
State
P
D
0.29
W
t
≤
5 s
0.33
W
Pulsed Drain Current
tp = 10 s
I
DM
3.0
A
Operating Junction and Storage Temperature
T
J
,
T
STG
55 to
150
°
C
Source Current (Body Diode), Continuous
I
S
0.46
A
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Units
Junction
to
Ambient – Steady State (Note 1)
R
JA
430
°
C/W
Junction
to
Ambient
t
≤
5 s (Note 1)
R
JA
375
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface
mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
S
G
D
Device
Package
Shipping
ORDERING INFORMATION
NTS2101PT1
SOT
323
3000/Tape & Reel
P
Channel MOSFET
SC
70/SOT
323
CASE 419
STYLE 8
MARKING DIAGRAM &
PIN ASSIGNMENT
S
2
1
3
http://onsemi.com
V
(BR)DSS
R
DS(on)
Typ
I
D
Max
8.0 V
65 m @
4.5 V
78 m @
2.5 V
117 m @
1.8 V
1.4 A
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTS2101PT1G
SOT
323
(Pb
Free)
3000/Tape & Reel
TS M
1
2
3
G
D
TS
M
= Device Code
= Date Code*
= Pb
Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
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