參數(shù)資料
型號(hào)： NTR4503N
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET 30V, 2.5A, Single N Channel, SOT23(30V，2.5A雙功率MOSFET)
中文描述： 功率MOSFET 30V的，包2.5a，單N通道，SOT23封裝（30V的，包2.5a雙功率MOSFET的）
文件頁數(shù)： 1/6頁
文件大小： 54K
代理商： NTR4503N
Semiconductor Components Industries, LLC, 2005
March, 2005 Rev. 3
1
Publication Order Number:
NTR4503N/D
NTR4503N
Power MOSFET
30 V, 2.5 A, Single NChannel, SOT23
Features
Leading Planar Technology for Low Gate Charge / Fast Switching
4.5 V Rated for Low Voltage Gate Drive
SOT23 Surface Mount for Small Footprint (3 x 3 mm)
PbFree Package is Available
Applications
DCDC Conversion
Load/Power Switch for Portables
Load/Power Switch for Computing
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
30
V
GatetoSource Voltage
V
GS
±
20
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
I
D
2.0
A
T
A
= 85
°
C
1.5
t
≤
10 s
T
A
= 25
°
C
2.5
Power Dissipation
(Note 1)
Steady
State
T
A
= 25
°
C
P
D
0.73
W
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25
°
C
I
D
1.5
A
T
A
= 85
°
C
1.1
Power Dissipation
(Note 2)
T
A
= 25
°
C
P
D
0.42
W
Pulsed Drain Current
t
p
= 10 s
I
DM
6.0
A
ESD Capability (Note 3)
C = 100 pF,
RS = 1500
ESD
125
V
Operating Junction and Storage Temperature
T
J
,
T
stg
55 to
150
°
C
Source Current (Body Diode)
I
S
2.0
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
JunctiontoAmbient Steady State (Note 1)
R
JA
170
°
C/W
JunctiontoAmbient t < 10 s (Note 1)
R
JA
100
JunctiontoAmbient Steady State (Note 2)
R
JA
300
1. Surfacemounted on FR4 board using 1 in sq pad size.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
3. ESD Rating Information: HBM Class 0.
G
D
S
Device
Package
Shipping
ORDERING INFORMATION
NTR4503NT1
SOT23
3000/Tape & Reel
http://onsemi.com
30 V
105 m @ 4.5 V
85 m @ 10 V
R
DS(on)
TYP
2.5 A
I
D
MAX
V
(BR)DSS
SOT23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
2
TR3
M
= Specific Device Code
= Date Code
3
TR3
1
3
Drain
1
Gate
2
Source
NChannel
NTR4503NT1G
SOT23
(PbFree)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTR4503NT3G
SOT23
(PbFree)
10000/Tape & Reel
M
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTR4503NST1G 制造商:ON Semiconductor 功能描述:NFET SOT23 30V 2.5A 140MO - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / NFET SOT23 30V 2.5A 140MO
NTR4503NT1 功能描述:MOSFET 30V 2.5A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTR4503NT1G 功能描述:MOSFET 30V 2.5A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTR4503NT1G-CUT TAPE 制造商:ON 功能描述:NTR Series N-Channel 20 V 85 mOhm 0.73 W Surface Mount Power MOSFET - SOT-23
NTR4503NT3 功能描述:MOSFET 30V 2.5A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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