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參數(shù)資料
| 型號(hào)： | NTR4502P |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 30V, 1.95A, Single, P Channel, SOT23(30V，1.95A雙功率MOSFET) |
| 中文描述： | 功率MOSFET 30V的，1.95A，單，P通道，SOT23封裝（30V的，1.95A雙功率MOSFET的） |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 55K |
| 代理商： | NTR4502P |
Semiconductor Components Industries, LLC, 2005
March, 2005 Rev. 3
1
Publication Order Number:
NTR4502P/D
NTR4502P
Power MOSFET
30 V, 1.95 A, Single, PChannel,
SOT23
Features
Leading Planar Technology for Low Gate Charge / Fast Switching
Low R
DS(ON)
for Low Conduction Losses
SOT23 Surface Mount for Small Footprint (3 X 3 mm)
PbFree Package May be Available. The GSuffix Denotes a
PbFree Lead Finish
Applications
DC to DC Conversion
Load/Power Switch for Portables and Computing
Motherboard, Notebooks, Camcorders, Digital Camera’s, etc.
Battery Charging Circuits
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
30
V
GatetoSource Voltage
V
GS
20
V
Drain Current (Note 1)
t < 10 s
T
A
= 25
°
C
I
D
1.95
A
T
A
= 70
°
C
1.56
Power Dissipation
(Note 1)
t < 10 s
P
D
1.25
W
Continuous Drain Current
(Note 1)
Steady
State
T
A
= 25
°
C
I
D
1.13
A
T
A
= 70
°
C
0.90
Power Dissipation
(Note 1)
Steady State
P
D
0.4
W
Pulsed Drain Current
t
p
= 10 s
I
DM
6.8
A
Operating Junction and Storage Temperature
T
J
,
T
STG
55 to
150
°
C
Source Current (Body Diode)
I
S
1.25
A
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
T
L
260
°
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
JunctiontoAmbient – Steady State (Note 1)
R
JA
300
°
C/W
JunctiontoAmbient – t = 10 s (Note 1)
R
JA
100
1. Surfacemounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
http://onsemi.com
SOT23
CASE 318
Style 21
2
3
TR2
1
3
Drain
1
Gate
2
Source
TR2
M
= Specific Device Code
= Date Code
MARKING DIAGRAM/
PIN ASSIGNMENT
S
G
D
PChannel MOSFET
V
(BR)DSS
R
DS(on)
TYP
I
D
Max
(Note 1)
30 V
155 m @ 10 V
240 m @ 4.5 V
1.95 A
Device
Package
Shipping
ORDERING INFORMATION
NTR4502PT1
SOT23
3000 / Tape & Reel
NTR4502PT3
SOT23
10000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NTR4502PT1G
SOT23
(PbFree)
3000 / Tape & Reel
NTR4502PT3G
10000 / Tape & Reel
SOT23
(PbFree)
M
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTR4502PT1 | 功能描述:MOSFET -30V -1.95A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTR4502PT1G | 功能描述:MOSFET -30V -1.95A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTR4502PT3 | 功能描述:MOSFET -30V -1.95A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTR4502PT3G | 功能描述:MOSFET -30V -1.95A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTR4503N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23 |
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