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參數(shù)資料
| 型號(hào)： | NTQD6968N |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 7.0A, 20V, Common Drain, Dual N Channel, TSSOP8(7.0A, 20V雙功率MOSFET) |
| 中文描述： | 6.2 A, 20 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, CASE 948S-01, TSSOP-8 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 150K |
| 代理商： | NTQD6968N |
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 2
1
Publication Order Number:
NTQD6968N/D
NTQD6968N
Power MOSFET
7.0 A, 20 V, Common Drain,
Dual N
Channel, TSSOP
8
Features
Low R
DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
3 mm Wide TSSOP
8 Surface Mount Package
High Speed, Soft Recovery Diode
TSSOP
8 Mounting Information Provided
Pb
Free Package is Available
Applications
Battery Protection Circuits
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain
to
Source Voltage
V
DSS
20
Vdc
Gate
to
Source Voltage
Continuous
V
GS
12
Vdc
Drain Current
Continuous @ T
A
25
°
C (Note 1)
Continuous @ T
A
70
°
C (Note 1)
Pulsed (Note 3)
I
D
I
D
I
DM
7.0
5.6
20
Adc
Total Power Dissipation @ T
A
25
°
C (Note 1)
P
D
1.81
W
Drain Current
Continuous @ T
A
25
°
C (Note 2)
Continuous @ T
A
70
°
C (Note 2)
Pulsed (Note 3)
I
D
I
D
I
DM
6.2
4.9
18
Adc
Total Power Dissipation @ T
A
25
°
C (Note 2)
P
D
1.39
W
Operating and Storage Temperature Range
T
J
, T
stg
55 to
+150
°
C
Thermal Resistance
Junction
to
Ambient (Note 1)
Junction
to
Ambient (Note 2)
R
JA
69
90
°
C/W
Maximum Lead Temperature for Soldering Pur-
poses for 10 seconds
TL
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted onto a 2
″
square FR
4 Board
(1 in sq, 2 oz. Cu 0.06
″
thick single sided), t
≤
10 sec.
2. Mounted onto a 2
″
square FR
4 Board
(1 in sq, 2 oz. Cu 0.06
″
thick single sided), Steady State.
3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
Device
Package
Shipping
ORDERING INFORMATION
N
Channel
D
S1
G1
NTQD6968NR2
TSSOP
8
4000/Tape & Reel
N
Channel
D
S2
G2
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
20 V
17 m @ 4.5 V
R
DS(on)
TYP
7.0 A
I
D
MAX
V
(BR)DSS
TSSOP
8
CASE 948S
PLASTIC
1
MARKING DIAGRAM
&
PIN ASSIGNMENT
D D D D
8
E68
A
Y
WW
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb
Free Package
S1
E68
YWW
A
G1 S2 G2
1
http://onsemi.com
NTQD6968NR2G
TSSOP
8
(Pb
Free)
4000/Tape & Reel
NTQD6968N
TSSOP
8
100 Units / Rail
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| NTQD6968NR2 | 功能描述:MOSFET 20V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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