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參數(shù)資料
| 型號(hào)： | NTR0202PL |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET -20 V, -400 mA, P-Channel SOT-23 Package( -400mA, -20V，P通道，SOT–23封裝的功率MOSFET) |
| 中文描述： | 功率MOSFET -20五，-400 mA的P通道SOT - 23封裝（- 400mA的- 20V的，P通道，采用SOT - 23封裝的功率MOSFET的） |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 141K |
| 代理商： | NTR0202PL |
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 4
1
Publication Order Number:
NTR0202PL/D
NTR0202PL
Power MOSFET
20 V,
400 mA, P
Channel
SOT
23 Package
Features
Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
R
DSon
= 0.80 , V
GS
=
10 V
R
DSon
= 1.10 , V
GS
=
4.5 V
Miniature SOT
23 Surface Mount Package Saves Board Space
Pb
Free Packages are Available
Applications
DC
DC Converters
Computers
Printers
PCMCIA Cards
Cellular and Cordless Telephones
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain
to
Source Voltage
V
DSS
20
V
Gate
to
Source Voltage
Continuous
V
GS
20
V
Continuous Drain Current @ T
A
= 25
°
C
Pulsed Drain Current (t
p
≤
10 s)
I
D
I
DM
0.4
1.0
A
Total Power Dissipation @ T
A
= 25
°
C (Note 1)
P
D
225
mW
Operating and Storage Temperature Range
T
J
, T
stg
55 to
150
°
C
Thermal Resistance
Junction
to
Ambient
R
JA
556
°
C/W
Source Current (Body Diode)
I
S
0.4
A
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 s
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2%.
Device
Package
Shipping
ORDERING INFORMATION
NTR0202PLT1
SOT
23
3000 Tape & Reel
NTR0202PLT3
SOT
23
10,000 Tape & Reel
http://onsemi.com
20 V
550 m @
10 V
R
DS(on)
Typ
400 mA
I
D
MAX
V
(BR)DSS
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTR0202PLT3G
SOT
23
(Pb
Free)
10,000 Tape & Reel
NTR0202PLT1G
SOT
23
(Pb
Free)
3000 Tape & Reel
D
G
S
P
Channel
SOT
23
CASE 318
STYLE 21
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain
3
PL
M
= Specific Device Code
= Date Code*
= Pb
Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
PL M
1
Gate
2
Source
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| NTR4101PT1 | Trench Power MOSFET −20 V, Single P−Channel, SOT−23 |
| NTR4101PT1G | Trench Power MOSFET −20 V, Single P−Channel, SOT−23 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTR0202PL/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 400 mA 20 V P-Channel SOT-23 |
| NTR0202PL_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -20 V, -400 mA, P-Channel SOT-23 Package |
| NTR0202PLT1 | 功能描述:MOSFET -20V -400mA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTR0202PLT1G | 功能描述:MOSFET -20V -400mA P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTR0202PLT1G-CUT TAPE | 制造商:ON 功能描述:NTR Series P-Channel 20 V 550 mOhm 225 mW Surface Mount Power MOSFET - SOT-23 |
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