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參數(shù)資料
| 型號(hào)： | NTR2101P |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Small Signal MOSFET 8.0V, 3.7A, Single P Channel, SOT23(8.0V, 3.7A雙功率MOSFET) |
| 中文描述： | 小信號(hào)MOSFET 8.0V，3.7A，單P通道，SOT23封裝（8.0V，3.7A雙功率MOSFET的） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 142K |
| 代理商： | NTR2101P |
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 4
1
Publication Order Number:
NTR2101P/D
NTR2101P
Small Signal MOSFET
8.0 V,
3.7 A, Single P
Channel, SOT
23
Features
Leading Trench Technology for Low R
DS(on)
1.8 V Rated for Low Voltage Gate Drive
SOT
23 Surface Mount for Small Footprint (3 x 3 mm)
Pb
Free Package is Available
Applications
High Side Load Switch
DC
DC Conversion
Cell Phone, Notebook, PDAs, etc.
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain
to
Source Voltage
V
DSS
8.0
V
Gate
to
Source Voltage
V
GS
±
8.0
V
Continuous Drain
Current (Note 1)
t
≤
10 s
T
A
= 25
°
C
T
A
= 70
°
C
I
D
3.7
A
3.0
Power Dissipation
(Note 1)
t
≤
10 s
P
D
0.96
W
Pulsed Drain Current
tp = 10 s
I
DM
11
A
Operating Junction and Storage Temperature
T
J
,
T
STG
55 to
150
°
C
Source Current (Body Diode)
I
S
1.2
A
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction
to
Ambient – Steady State
R
JA
160
°
C/W
Junction
to
Ambient
t
≤
10 s
R
JA
130
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
Device
Package
Shipping
ORDERING INFORMATION
NTR2101PT1
SOT
23
3000/Tape & Reel
V
(BR)DSS
R
DS(on)
Typ
I
D
Max
8.0 V
39 m @
4.5 V
52 m @
2.5 V
79 m @
1.8 V
3.7 A
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTR2101PT1G
SOT
23
(Pb
Free)
3000/Tape & Reel
http://onsemi.com
D
G
S
P
Channel
SOT
23
CASE 318
STYLE 21
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain
3
TR7
M
= Specific Device Code
= Date Code*
= Pb
Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
TR7 M
1
Gate
2
Source
1
2
3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTR2101PT1 | 功能描述:MOSFET -8V 3.7A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTR2101PT1G | 功能描述:MOSFET -8V 3.7A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTR2101PT1G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTR2101PT1G-CUT TAPE | 制造商:ON 功能描述:NTR Series P-Channel 8 V 39 mOhm 0.96 W SMT Small Signal MOSFET - SOT-23 |
| NTR25A1000BTRF | 制造商:NIC Components Corp 功能描述:RES THNFLM 2010 100 OHM 0.05% 1/4W 10PPM/ C SMD - Tape and Reel |
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