參數(shù)資料
型號(hào)： NTQS6463
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： Power MOSFET
中文描述： 5500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： PLASTIC, CASE 948S-01, TSSOP-8
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 66K
代理商： NTQS6463
Semiconductor Components Industries, LLC, 2004
September, 2004 Rev. 2
1
Publication Order Number:
NTQS6463/D
NTQS6463
Power MOSFET
20 V, 6.8 A, PChannel TSSOP8
Features
New Low Profile TSSOP8 Package
Ultra Low R
DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
I
DSS
and V
DS(on)
Specified at Elevated Temperatures
Applications
Power Management in Portable and BatteryPowered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
Lithium Ion Battery Applications
Note Book PC
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Drain Current (Note 1)
Continuous @ T
A
= 25
°
C
Continuous @ T
A
= 70
°
C
Pulsed (Note 3)
Total Power Dissipation (Note 1)
@ T
A
= 25
°
C
Drain Current (Note 2)
Continuous @ T
A
= 25
°
C
Continuous @ T
A
= 70
°
C
Pulsed (Note 3)
Total Power Dissipation (Note 2)
@ T
A
= 25
°
C
Operating and Storage
Temperature Range
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 40 V, I
L
= 18.4 A,
L = 5.0 mH, R
G
= 25 )
Thermal Resistance
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
V
DSS
V
GS
20
12
V
V
A
I
D
I
D
I
DM
P
D
5.5
4.4
30
0.93
W
I
D
I
D
I
DM
P
D
6.8
5.4
30
1.39
A
W
T
J
, T
stg
55 to
+150
845
°
C
E
AS
mJ
R
JA
134
90
°
C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Minimum 3
″
X 3
″
FR4 board, steady state.
2. Mounted on 1
″
square (1 oz.) board, steady state.
3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
Device
Package
Shipping
ORDERING INFORMATION
NTQS6463
TSSOP8
100 Units/Rail
TSSOP8
CASE 948S
PLASTIC
1
PIN ASSIGNMENT
8
2
3
4
D
S
S
G
1
7
6
5
8
D
S
S
D
Top View
NTQS6463R2
TSSOP8
3000/Tape & Reel
463
YWW
N
D
S
G
PChannel
MARKING
DIAGRAM
463
Y
WW
N
= Device Code
= Year
= Work Week
= MOSFET
http://onsemi.com
V
DSS
R
DS(on)
TYP
I
D
MAX
20 V
20 m @ 10 V
6.8 A
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
相關(guān)PDF資料
PDF描述
NTQS6463R2 Power MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTQS6463/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 6.2 Amps， 20 Volts
NTQS6463R2 功能描述:MOSFET -20V -6.8A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTQS6466 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 6.8A I(D) | SO
NTQS6466/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 6.8 Amps， 20 Volts
NTR0202PL 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package
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