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參數(shù)資料
| 型號： | NTQS6463R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Power MOSFET |
| 中文描述： | 5500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, CASE 948S-01, TSSOP-8 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 66K |
| 代理商： | NTQS6463R2 |
Semiconductor Components Industries, LLC, 2004
September, 2004 Rev. 2
1
Publication Order Number:
NTQS6463/D
NTQS6463
Power MOSFET
20 V, 6.8 A, PChannel TSSOP8
Features
New Low Profile TSSOP8 Package
Ultra Low R
DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
I
DSS
and V
DS(on)
Specified at Elevated Temperatures
Applications
Power Management in Portable and BatteryPowered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
Lithium Ion Battery Applications
Note Book PC
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Drain Current (Note 1)
Continuous @ T
A
= 25
°
C
Continuous @ T
A
= 70
°
C
Pulsed (Note 3)
Total Power Dissipation (Note 1)
@ T
A
= 25
°
C
Drain Current (Note 2)
Continuous @ T
A
= 25
°
C
Continuous @ T
A
= 70
°
C
Pulsed (Note 3)
Total Power Dissipation (Note 2)
@ T
A
= 25
°
C
Operating and Storage
Temperature Range
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 40 V, I
L
= 18.4 A,
L = 5.0 mH, R
G
= 25 )
Thermal Resistance
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
V
DSS
V
GS
20
12
V
V
A
I
D
I
D
I
DM
P
D
5.5
4.4
30
0.93
W
I
D
I
D
I
DM
P
D
6.8
5.4
30
1.39
A
W
T
J
, T
stg
55 to
+150
845
°
C
E
AS
mJ
R
JA
134
90
°
C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Minimum 3
″
X 3
″
FR4 board, steady state.
2. Mounted on 1
″
square (1 oz.) board, steady state.
3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
Device
Package
Shipping
ORDERING INFORMATION
NTQS6463
TSSOP8
100 Units/Rail
TSSOP8
CASE 948S
PLASTIC
1
PIN ASSIGNMENT
8
2
3
4
D
S
S
G
1
7
6
5
8
D
S
S
D
Top View
NTQS6463R2
TSSOP8
3000/Tape & Reel
463
YWW
N
D
S
G
PChannel
MARKING
DIAGRAM
463
Y
WW
N
= Device Code
= Year
= Work Week
= MOSFET
http://onsemi.com
V
DSS
R
DS(on)
TYP
I
D
MAX
20 V
20 m @ 10 V
6.8 A
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTR0202PL | Power MOSFET -20 V, -400 mA, P-Channel SOT-23 Package( -400mA, -20V，P通道，SOT–23封裝的功率MOSFET) |
| NTR2101P | Small Signal MOSFET 8.0V, 3.7A, Single P Channel, SOT23(8.0V, 3.7A雙功率MOSFET) |
| NTR4101P | Trench Power MOSFET −20 V, Single P−Channel, SOT−23 |
| NTR4101PT1 | Trench Power MOSFET −20 V, Single P−Channel, SOT−23 |
| NTR4101PT1G | Trench Power MOSFET −20 V, Single P−Channel, SOT−23 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTQS6466 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 6.8A I(D) | SO |
| NTQS6466/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 6.8 Amps， 20 Volts |
| NTR0202PL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package |
| NTR0202PL/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 400 mA 20 V P-Channel SOT-23 |
| NTR0202PL_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -20 V, -400 mA, P-Channel SOT-23 Package |
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