參數(shù)資料
型號： NTQD6968
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Power MOSFET 6.6 Amps, 20 Volts N-Channel TSSOP-8(6.6A,20V,N通道，TSSOP-8封裝的功率MOSFET)
中文描述： 6.6 A, 20 V, 0.022 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, TSSOP-8
文件頁數(shù)： 1/8頁
文件大小： 76K
代理商： NTQD6968
Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 0
1
Publication Order Number:
NTQD6968/D
NTQD6968
Power MOSFET
6.6 Amps, 20 Volts
N–Channel TSSOP–8
Features
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature Dual TSSOP–8 Surface Mount Package
Diode Exhibits High Speed, Soft Recovery
Micro8 Mounting Information Provided
Applications
Power Management in Portable and Battery–Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current – Continuous @ TA 25
°
C
Drain Current
– Continuous @ TA 70
°
C
Drain Current
– Pulsed (Note 3)
Total Power Dissipation @ TA 25
°
C
Drain Current – Continuous @ TA 25
°
C
Drain Current
– Continuous @ TA 70
°
C
Drain Current
– Pulsed (Note 3)
Total Power Dissipation @ TA 25
°
C
Operating and Storage Temperature Range
VDSS
VGS
ID
ID
IDM
PD
ID
ID
IDM
PD
TJ, Tstg
20
12
5.4
4.5
15
0.94
6.6
4.5
20
1.42
–55 to
+150
150
Vdc
Vdc
Adc
W
Adc
W
°
C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25
°
C
(VDD = 20 Vdc, VGS = 5.0 Vdc,
Peak IL = 5.5 Apk, L = 10 mH, RG = 25
)
Thermal Resistance –
Junction–to–Ambient (Note 1)
Junction–to–Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
1. Minimum FR–4 or G–10 PCB, Steady State.
2. Mounted onto a 2
″
square FR–4 Board (1
″
sq. 2oz. Cu 0.06
″
thick single
sided), Steady State.
3. Pulse Test: Pulse Width = 300
μ
s, Duty Cycle = 2%.
EAS
mJ
RJA
132
88
260
°
C/W
TL
°
C
Device
Package
Shipping
ORDERING INFORMATION
NTQD6968
TSSOP–8
100 Units/Rail
TSSOP–8
CASE 948S
PLASTIC
1
MARKING DIAGRAM
& PIN ASSIGNMENT
http://onsemi.com
N–Channel
D
S1
G1
8
2
3
4
D
S1
S1
G1
1
7
6
5
8
D
S2
S2
G2
Top View
NTQD6968R2
TSSOP–8
3000/Tape & Reel
N–Channel
D
S2
G2
968
YWW
N
6.6 AMPERES
20 VOLTS
RDS(on) = 22 m
968
Y
WW
N
= Device Code
= Year
= Work Week
= MOSFET
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NTR2101P Small Signal MOSFET 8.0V, 3.7A, Single P Channel, SOT23(8.0V, 3.7A雙功率MOSFET)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTQD6968N 功能描述:MOSFET 20V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTQD6968NR2 功能描述:MOSFET 20V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTQD6968NR2G 功能描述:MOSFET 20V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTQD6968R2 功能描述:MOSFET PWR N-CH 6.6A 20V 8TSSOP RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
NTQS6463 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET
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