參數(shù)資料
型號: NTP75N06G
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: Power MOSFET
中文描述: 75 A, 60 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: LEAD FREE, CASE 221A-09, 3 PIN
文件頁數(shù): 4/8頁
文件大小: 79K
代理商: NTP75N06G
NTP75N06, NTB75N06
http://onsemi.com
4
1000
100
10
1
0.1
0
200
400
600
800
1000
8
4
10
2
6
0
12
50
10
10
6000
5
0
C
0
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
V
G
,
1
1000
10
100
1
100
Figure 9. Resistive Switching Time Variations
vs. Gate Resistance
R
G
, GATE RESISTANCE ( )
Figure 10. Diode Forward Voltage vs. Current
V
SD
, SOURCETODRAIN VOLTAGE (V)
t
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAINTOSOURCE VOLTAGE (V)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (
°
C)
I
D
,
E
A
,
A
10
1
100
0
10
100
0.6
0.76 0.8
0.72
0.68
0.84
0.64
0.96
30
60
20
40
0
70
80
25
125
150
100
75
50
175
GATETOSOURCE OR DRAINTOSOURCE (V)
2000
4000
8000
10000
25
I
S
,
15
20
5
20
30
40
50
60
0.86 0.92
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
V
GS
I
D
= 75 A
T
J
= 25
°
C
V
GS
V
GS
= 0 V
V
DS
= 0 V
T
J
= 25
°
C
C
rss
C
iss
C
oss
C
rss
C
iss
V
GS
= 20 V
SINGLE PULSE
T
C
= 25
°
C
V
DS
= 30 V
I
D
= 75 A
V
GS
= 5 V
V
GS
= 0 V
T
J
= 25
°
C
I
D
= 75 A
10 ms
1 ms
100 s
10 s
dc
t
f
t
d(off)
t
d(on)
t
r
V
DS
Q
2
Q
1
Q
T
10
70
80
90
1
10
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