- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363672 > NTP75N06G (ON SEMICONDUCTOR) Power MOSFET PDF資料下載
參數(shù)資料
| 型號： | NTP75N06G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET |
| 中文描述： | 75 A, 60 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 79K |
| 代理商： | NTP75N06G |
NTP75N06, NTB75N06
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 1)
(V
GS
= 0 Vdc, I
D
= 250 Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
71
73
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150
°
C)
I
DSS
10
100
Adc
GateBody Leakage Current (V
GS
=
±
20
Vdc, V
DS
= 0 Vdc)
I
GSS
±
100
nAdc
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage (Note 1)
(V
DS
= V
GS
, I
D
= 250 Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
2.0
2.8
8.0
4.0
Vdc
mV/
°
C
Static DraintoSource OnResistance (Note 1)
(V
GS
= 10 Vdc, I
D
= 37.5 Adc)
R
DS(on)
8.2
9.5
m
Static DraintoSource OnVoltage (Note 1)
(V
GS
= 10 Vdc, I
D
= 75 Adc)
(V
GS
= 10 Vdc, I
D
= 37.5 Adc, T
J
= 150
°
C)
V
DS(on)
0.72
0.63
0.86
Vdc
Forward Transconductance (Note 1) (V
DS
= 15 Vdc, I
D
= 37.5 Adc)
g
FS
40.2
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
3220
4510
pF
Output Capacitance
C
oss
1020
1430
Transfer Capacitance
C
rss
234
330
SWITCHING CHARACTERISTICS
(Note 2)
TurnOn Delay Time
t
d(on)
16
25
ns
Rise Time
= 30 Vdc, I
= 75 Adc,
(V
DD
D
75 Adc,
V
GS
= 10 Vdc, R
G
= 9.1 ) (Note 1)
t
r
112
155
TurnOff Delay Time
t
d(off)
90
125
Fall Time
t
f
100
140
Gate Charge
(V
DS
= 48 Vdc, I
D
= 75 Adc,
V
GS
= 10 Vdc) (Note 1)
Q
T
92
130
nC
Q
1
14
Q
2
44
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(I
S
= 75 Adc, V
GS
= 0 Vdc) (Note 1)
(I
S
= 75 Adc, V
GS
= 0 Vdc, T
J
= 150
°
C)
V
SD
1.0
0.9
1.1
Vdc
Reverse Recovery Time
(I
S
= 75 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ s) (Note 1)
t
rr
77
ns
t
a
49
t
b
28
Reverse Recovery Stored Charge
Q
RR
0.16
C
1. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperatures.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTD12N10-1 | Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK |
| NTD12N10T4 | Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK |
| NTD12N10T4G | Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK |
| NTD14N03R | Power MOSFET 14 Amps, 25Volts N-Channel DPAK(14A, 25 V，N通道，DPAK封裝的功率MOSFET) |
| NTD15N06 | Power MOSFET 15 Amps, 60 Volts |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTP75N06G | 制造商:ON Semiconductor 功能描述:MOSFET N |
| NTP75N06G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTP75N06L | 功能描述:MOSFET N-CH 60V 75A TO-220AB RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| NTP75N06L/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 75 Amps， 60 Volts， Logic Level |
| NTP7N40/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 7 Amps， 400 Volts |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。