- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄363672 > NTP27N06L (ON SEMICONDUCTOR) Power MOSFET 27Amps, 60 Volts,Logic Level N-Channel TO-220(27A, 60 V,邏輯電平，N通道，TO-220封裝的功率MOSFET) PDF資料下載
參數(shù)資料
| 型號(hào)： | NTP27N06L |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 27Amps, 60 Volts,Logic Level N-Channel TO-220(27A, 60 V,邏輯電平，N通道，TO-220封裝的功率MOSFET) |
| 中文描述： | 27 A, 60 V, 0.048 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | NTP27N06L |
NTP27N06L, NTB27N06L
http://onsemi.com
8
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads.
Solder stencils are used to screen the optimum amount.
These stencils are typically 0.008 inches thick and may be
made of brass or stainless steel. For packages such as the
SC–59, SC–70/SOT–323, SOD–123, SOT–23, SOT–143,
SOT–223, SO–8, SO–14, SO–16, and SMB/SMC diode
packages, the stencil opening should be the same as the pad
size or a 1:1 registration. This is not the case with the DPAK
and D2PAK packages. If one uses a 1:1 opening to screen
solder onto the drain pad, misalignment and/or
“tombstoning” may occur due to an excess of solder. For
these two packages, the opening in the stencil for the paste
should be approximately 50% of the tab area. The opening
for the leads is still a 1:1 registration. Figure 15 shows a
typical stencil for the DPAK and D2PAK packages. The
pattern of the opening in the stencil for the drain pad is not
critical as long as it allows approximately 50% of the pad to
be covered with paste.
Figure 15. Typical Stencil for DPAK and
D2PAK Packages
SOLDER PASTE
OPENINGS
STENCIL
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100
°
C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10
°
C.
The soldering temperature and time shall not exceed
260
°
C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5
°
C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied
during cooling.
* * Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
* * Due to shadowing and the inability to set the wave
height to incorporate other surface mount components, the
D2PAK is not recommended for wave soldering.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTB30N06 | Power MOSFET 30Amps, 60 Volts, N-Channel TO-220(30A, 60 V，N通道TO-220封裝的功率MOSFET) |
| NTB30N20 | Power MOSFET 30 Amps, 200 Volts N-Channel Enhancement-Mode(30A，200V，N通道，增強(qiáng)模式功率MOSFET) |
| NTB35N15 | Power MOSFET 37 Amps, 150 Volts N-Channel Enhancement-Mode(37A，150V，N通道，增強(qiáng)模式功率MOSFET) |
| NTB45N06 | Power MOSFET 45 Amps, 60 Volts |
| NTB45N06T4 | Power MOSFET 45 Amps, 60 Volts |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTP2955 | 功能描述:MOSFET -60V -12A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTP2955G | 功能描述:MOSFET -60V -12A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTP30N06 | 功能描述:MOSFET N-CH 60V 27A TO220AB RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| NTP30N06L | 功能描述:MOSFET NFET 60V 30A LL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTP30N06LG | 功能描述:MOSFET NFET 60V 30A LL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。