參數(shù)資料
型號(hào): NTF3055L175
廠商: ON SEMICONDUCTOR
英文描述: Power MOSFET 2.0 A, 60 V, Logic Level N-Channel SOT-223(2A,60V邏輯電平,N通道,SOT-223封裝的功率MOSFET)
中文描述: 功率MOSFET 2.0甲,60伏特,邏輯電平N溝道的SOT - 223(第2A,60V的邏輯電平,?通道,采用SOT - 223封裝的功率MOSFET的)
文件頁(yè)數(shù): 4/6頁(yè)
文件大?。?/td> 63K
代理商: NTF3055L175
NTF3055L175
http://onsemi.com
4
10
10
15
5
0
20
5
25
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
V
GS
100
1
0.1
0.001
100
10
1
7
5
4
3
2
1
0
60
20
10
0
2
0
0.6
700
500
400
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE
(VOLTS)
Figure 7. Capacitance Variation
C
300
200
Q
g
, TOTAL GATE CHARGE (nC)
Figure 8. GatetoSource and
DraintoSource Voltage versus Total Charge
V
G
,
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
R
G
, GATE RESISTANCE ( )
Figure 10. Diode Forward Voltage versus Current
V
SD
, SOURCETODRAIN VOLTAGE (VOLTS)
I
S
,
t
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (
°
C)
I
D
,
E
A
,
A
0
5
4
2
6
1
10
100
0.72
0.68
0.64
0.84
0.1
10
100
1
25
125
150
100
75
175
50
I
D
= 2 A
T
J
= 25
°
C
V
GS
V
GS
= 0 V
V
DS
= 0 V
T
J
= 25
°
C
C
rss
C
iss
C
oss
C
rss
1.6
1.2
0.76
0.8
C
iss
V
GS
= 15 V
SINGLE PULSE
T
C
= 25
°
C
V
DS
= 30 V
I
D
= 2 A
V
GS
= 5 V
V
GS
= 0 V
T
J
= 25
°
C
I
D
= 6 A
1 ms
100 s
10 ms
dc
t
r
t
d(off)
t
d(on)
V
DS
0.88
0.01
30
40
50
Q
2
Q
1
Q
T
70
0
3
1
0.8
0.4
t
f
100
600
6
10
10 s
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NTF3055L175T1 功能描述:MOSFET 60V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTF3055L175T1G 功能描述:MOSFET 60V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTF3055L175T3 功能描述:MOSFET 60V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTF3055L175T3G 功能描述:MOSFET 60V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTF3055L175T3LF 功能描述:MOSFET N-CH 60V 2A SOT223 RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件