參數(shù)資料
型號(hào): NTF3055L175
廠商: ON SEMICONDUCTOR
英文描述: Power MOSFET 2.0 A, 60 V, Logic Level N-Channel SOT-223(2A,60V邏輯電平,N通道,SOT-223封裝的功率MOSFET)
中文描述: 功率MOSFET 2.0甲,60伏特,邏輯電平N溝道的SOT - 223(第2A,60V的邏輯電平,?通道,采用SOT - 223封裝的功率MOSFET的)
文件頁(yè)數(shù): 3/6頁(yè)
文件大?。?/td> 63K
代理商: NTF3055L175
NTF3055L175
http://onsemi.com
3
0
0.5
2
3.5
2.5
1.5
1
3
4
0
0.5
2
3.5
2.5
1.5
1
3
4
0.8
2.8
0
3.2
2
0.4
1.2
1.6
2.4
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
Figure 3. OnResistance versus
GatetoSource Voltage
Figure 4. OnResistance versus Drain Current
and Gate Voltage
Figure 5. OnResistance Variation with
Temperature
Figure 6. DraintoSource Leakage Current
versus Voltage
V
GS,
GATETOSOURCE VOLTAGE (VOLTS)
I
D
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 55
°
C
0.28
0.24
0.2
0.16
0.12
0
I
D,
DRAIN CURRENT (AMPS)
R
D
I
D,
DRAIN CURRENT (AMPS)
R
D
V
GS
= 10 V
2
1.8
1.6
1.4
T
J
, JUNCTION TEMPERATURE (
°
C)
R
D
50
50
25
0
25
75
125
100
I
D
= 1 A
V
GS
= 5 V
0.8
0.6
150
1
10
1000
V
DS,
DRAINTOSOURCE VOLTAGE (VOLTS)
I
D
,
0
40
60
30
20
10
50
100
0
0.8
2.0
2.8
1.6
0.8
V
DS,
DRAINTOSOURCE VOLTAGE (VOLTS)
I
D
0
0.4
3.2
V
GS
= 5 V
V
GS
= 2.5 V
V
GS
= 5 V
V
GS
= 3 V
1.6
0.4
1.2
2.0
1
4.2
1.8
3.4
1.4
2.2
2.6
3
3.8
0.08
0.04
1.2
1.2
0.28
0.24
0.2
0.16
0.12
0
0.08
0.04
1
175
V
GS
= 3.5 V
V
GS
= 4 V
T
J
= 150
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 55
°
C
V
DS
10 V
V
GS
= 0 V
2.4
2.8
2.4
T
J
= 125
°
C
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NTF3055L175T1 功能描述:MOSFET 60V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTF3055L175T1G 功能描述:MOSFET 60V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTF3055L175T3 功能描述:MOSFET 60V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTF3055L175T3G 功能描述:MOSFET 60V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTF3055L175T3LF 功能描述:MOSFET N-CH 60V 2A SOT223 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件