- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361158 > NTF3055L108 (ON SEMICONDUCTOR) Power MOSFET 3.0 A, 60 V, Logic Level N-Channel SOT-223(3A,60V邏輯電平,N通道，SOT-223封裝的功率MOSFET) PDF資料下載
參數(shù)資料
| 型號： | NTF3055L108 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 3.0 A, 60 V, Logic Level N-Channel SOT-223(3A,60V邏輯電平,N通道，SOT-223封裝的功率MOSFET) |
| 中文描述： | 功率MOSFET 3.0甲，60伏特，邏輯電平N溝道的SOT - 223條第（3A，60V的邏輯電平，?通道，采用SOT - 223封裝的功率MOSFET的） |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 76K |
| 代理商： | NTF3055L108 |
NTF3055L108
http://onsemi.com
3
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
Figure 3. OnResistance vs. GatetoSource
Voltage
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
Figure 5. OnResistance Variation with
Temperature
Figure 6. DraintoSource Leakage Current
vs. Voltage
V
GS,
GATETOSOURCE VOLTAGE (VOLTS)
I
D
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 55
°
C
0
0.16
0.14
0.12
0.1
0.08
0.02
1
4
6
I
D,
DRAIN CURRENT (AMPS)
R
D
I
D,
DRAIN CURRENT (AMPS)
R
D
V
GS
= 10 V
2
1.8
1.6
1.4
T
J
, JUNCTION TEMPERATURE (
°
C)
R
D
50
50
25
0
25
75
125
100
I
D
= 1.5 A
V
GS
= 5 V
0.8
0.6
150
1
10
1000
10000
V
DS,
DRAINTOSOURCE VOLTAGE (VOLTS)
I
D
,
0
40
60
30
20
10
50
100
5
3
0
2
5
3
2
1
V
DS,
DRAINTOSOURCE VOLTAGE (VOLTS)
I
D
0
0.5
6
V
GS
= 5 V
V
GS
= 2.5 V
V
GS
= 6 V
V
GS
= 10 V
V
GS
= 3 V
4
1
1.5
2.5
1
5
2
4
1.5
2.5
3
3.5
4.5
0.06
0.04
2
V
GS,
GATETOSOURCE VOLTAGE (VOLTS)
1.2
3
2
5
0
6
4
1
3
0
0.16
0.14
0.12
0.1
0.08
0.02
1
4
6
5
3
0.06
0.04
2
1
175
V
GS
= 2.8 V
V
GS
= 3.2 V
V
GS
= 3.4 V
V
GS
= 3.5 V
V
GS
= 4.5 V
T
J
= 150
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 55
°
C
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 55
°
C
V
DS
> = 10 V
V
GS
= 0 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTF3055L175 | Power MOSFET 2.0 A, 60 V, Logic Level N-Channel SOT-223(2A,60V邏輯電平,N通道，SOT-223封裝的功率MOSFET) |
| NTGD1100 | 8V,±3.3A,Load Switch with Level Shift,P Channel,TSOP6 Power MOSFET(8V,±3.3A,P溝道功率MOSFET) |
| NTGD3133P | Power MOSFET(功率MOSFET) |
| NTGS4111P | Power MOSFET 30V, 4.7A, Single P Channel, TSOP6(30V, 4.7A功率MOSFET) |
| NTGS4141N | Power MOSFET(功率MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTF3055L108/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 3.0 Amps， 60 Volts， Logic Level |
| NTF3055L108D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 |
| NTF3055L108T1 | 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTF3055L108T1G | 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTF3055L108T3 | 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。