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參數(shù)資料
| 型號： | NTF3055L108 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 3.0 A, 60 V, Logic Level N-Channel SOT-223(3A,60V邏輯電平,N通道，SOT-223封裝的功率MOSFET) |
| 中文描述： | 功率MOSFET 3.0甲，60伏特，邏輯電平N溝道的SOT - 223條第（3A，60V的邏輯電平，?通道，采用SOT - 223封裝的功率MOSFET的） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 76K |
| 代理商： | NTF3055L108 |
NTF3055L108
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(Note 3)
(V
GS
= 0 Vdc,
I
D
= 250 Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
68
68
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150
°
C)
I
DSS
1.0
10
Adc
GateBody Leakage Current
(V
GS
=
±
15 Vdc, V
DS
= 0 Vdc)
I
GSS
±
100
nAdc
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
(Note 3)
(V
DS
= V
GS
,
I
D
= 250 Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
1.68
4.6
2.0
Vdc
mV/
°
C
Static DraintoSource OnResistance
(Note 3)
(V
GS
= 5.0 Vdc, I
D
= 1.5 Adc)
R
DS(on)
92
120
m
Static DraintoSource OnResistance
(Note 3)
(V
GS
= 5.0 Vdc, I
D
= 3.0 Adc)
(V
GS
= 5.0 Vdc, I
D
= 1.5 Adc, T
J
= 150
°
C)
V
DS(on)
0.290
0.250
0.43
Vdc
Forward Transconductance
(Note 3)
(V
DS
= 7.0 Vdc, I
D
= 3.0 Adc)
g
fs
5.7
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 V,
f = 1.0 MHz)
C
iss
313
440
pF
Output Capacitance
C
oss
112
160
Transfer Capacitance
C
rss
40
60
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
(V
DD
= 30 Vdc, I
D
= 3.0 Adc,
V
GS
= 5.0 Vdc,
R
G
= 9.1 ) (Note 3)
t
d(on)
11
25
ns
Rise Time
t
r
35
70
TurnOff Delay Time
t
d(off)
22
45
Fall Time
t
f
27
60
Gate Charge
(V
DS
= 48 Vdc, I
D
= 3.0 Adc,
V
GS
= 5.0 Vdc) (Note 3)
Q
T
7.6
15
nC
Q
1
1.4
Q
2
4.0
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(I
S
= 3.0 Adc, V
GS
= 0 Vdc)
(I
S
= 3.0 Adc, V
GS
= 0 Vdc,
T
J
= 150
°
C) (Note 3)
V
SD
0.87
0.72
1.0
Vdc
Reverse Recovery Time
(I
S
= 3.0 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ s) (Note 3)
t
rr
35
ns
t
a
21
t
b
14
Reverse Recovery Stored Charge
Q
RR
0.044
C
3. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2.0%.
4. Switching characteristics are independent of operating junction temperatures.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTF3055L108/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 3.0 Amps， 60 Volts， Logic Level |
| NTF3055L108D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 |
| NTF3055L108T1 | 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTF3055L108T1G | 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTF3055L108T3 | 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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