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參數(shù)資料
| 型號： | NTF3055-100 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223(3A,60V邏輯電平,N通道， SOT-223 封裝的功率MOSFET) |
| 中文描述： | 功率MOSFET三點〇安培，60伏特N通道的SOT - 223條第（3A，60V的邏輯電平，?通道，采用SOT - 223封裝的功率MOSFET的） |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 137K |
| 代理商： | NTF3055-100 |
NTF3055
100
http://onsemi.com
4
10
10
15
5
0
20
5
25
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
V
GS
100
1
0.1
0.01
100
10
1
12
4
2
0
60
20
10
0
3
0
0.54
800
500
400
GATE
TO
SOURCE OR DRAIN
TO
SOURCE VOLTAGE
(VOLTS)
Figure 7. Capacitance Variation
C
300
200
Q
g
, TOTAL GATE CHARGE (nC)
Figure 8. Gate
to
Source and
Drain
to
Source Voltage versus Total Charge
V
G
,
T
S
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
R
G
, GATE RESISTANCE ( )
Figure 10. Diode Forward Voltage versus Current
V
SD
, SOURCE
TO
DRAIN VOLTAGE (VOLTS)
I
S
,
t
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN
TO
SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (
°
C)
I
D
,
E
A
,
T
S
A
0
10
8
4
12
1
10
100
0.66
0.62
0.58
0.78
0.1
10
100
1
25
125
150
100
75
175
50
I
D
= 3 A
T
J
= 25
°
C
V
GS
V
GS
= 0 V
V
DS
= 0 V
T
J
= 25
°
C
C
rss
C
iss
C
oss
C
rss
1
0.7
0.74
C
iss
V
GS
= 20 V
SINGLE PULSE
T
C
= 25
°
C
V
DS
= 30 V
I
D
= 3 A
V
GS
= 10 V
V
GS
= 0 V
T
J
= 25
°
C
I
D
= 7 A
1 ms
100 s
10 ms
dc
t
r
t
d(off)
t
d(on)
V
DS
0.9
30
40
50
Q
2
Q
1
Q
T
80
0
6
2
t
f
100
600
6
10
700
8
10
2
70
0.82 0.86
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| NTF3055-160 | Power MOSFET 2.0 Amps, 60 Volts N–Channel SOT–223(2A,60V邏輯電平,N通道，SOT-223封裝的功率MOSFET) |
| NTF3055-160T1 | Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTF3055-100T1 | 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTF3055-100T1G | 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTF3055-100T1G | 制造商:ON Semiconductor 功能描述:TRANSISTORMOSFETN-CHANNEL60V V(BR)DSS |
| NTF3055-100T3 | 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTF3055-100T3G | 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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