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參數(shù)資料
| 型號(hào)： | NTF3055-100 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223(3A,60V邏輯電平,N通道， SOT-223 封裝的功率MOSFET) |
| 中文描述： | 功率MOSFET三點(diǎn)〇安培，60伏特N通道的SOT - 223條第（3A，60V的邏輯電平，?通道，采用SOT - 223封裝的功率MOSFET的） |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 137K |
| 代理商： | NTF3055-100 |
NTF3055
100
http://onsemi.com
3
5
0
6
1
2
3
4
Figure 1. On
Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On
Resistance versus
Gate
to
Source Voltage
Figure 4. On
Resistance versus Drain Current
and Gate Voltage
Figure 5. On
Resistance Variation with
Temperature
Figure 6. Drain
to
Source Leakage Current
versus Voltage
V
GS,
GATE
TO
SOURCE VOLTAGE (VOLTS)
I
D
T
J
= 25
°
C
T
J
= 100
°
C
T
J
=
55
°
C
0
0.16
0.12
0.1
0.08
0.06
0
1
3
6
I
D,
DRAIN CURRENT (AMPS)
R
D
T
S
I
D,
DRAIN CURRENT (AMPS)
R
D
T
S
V
GS
= 15 V
2.2
1.8
1.6
1.4
T
J
, JUNCTION TEMPERATURE (
°
C)
R
D
T
S
50
50
25
0
25
75
125
100
I
D
= 1.5 A
V
GS
= 10 V
0.8
0.6
150
1
10
1000
V
DS,
DRAIN
TO
SOURCE VOLTAGE (VOLTS)
I
D
,
0
40
60
30
20
10
50
100
5
2
0
1
4
2
1
V
DS,
DRAIN
TO
SOURCE VOLTAGE (VOLTS)
I
D
0
6
V
GS
= 10 V
V
GS
= 4 V
V
GS
= 4.5 V
V
GS
= 5 V
3
3
6
3.5
5
4
4.5
5.5
0.04
0.02
1.2
2
0
0.16
0.12
0.1
0.08
0.06
0
4
6
5
3
0.04
0.02
1
1
175
V
GS
= 10 V
V
GS
= 8 V
T
J
= 150
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 25
°
C
T
J
= 100
°
C
T
J
=
55
°
C
V
DS
≥
10 V
V
GS
= 0 V
4
5
3
4
2
T
J
= 125
°
C
0.14
0.14
2
V
GS
= 6 V
T
J
=
55
°
C
T
J
= 100
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTF3055-160 | Power MOSFET 2.0 Amps, 60 Volts N–Channel SOT–223(2A,60V邏輯電平,N通道，SOT-223封裝的功率MOSFET) |
| NTF3055-160T1 | Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223 |
| NTF3055-160T3 | Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223 |
| NTF3055-160T3LF | Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223 |
| NTF3055L108 | Power MOSFET 3.0 A, 60 V, Logic Level N-Channel SOT-223(3A,60V邏輯電平,N通道，SOT-223封裝的功率MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTF3055-100T1 | 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTF3055-100T1G | 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTF3055-100T1G | 制造商:ON Semiconductor 功能描述:TRANSISTORMOSFETN-CHANNEL60V V(BR)DSS |
| NTF3055-100T3 | 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTF3055-100T3G | 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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