參數(shù)資料
型號(hào)： NTF3055-100
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223(3A,60V邏輯電平,N通道， SOT-223 封裝的功率MOSFET)
中文描述： 功率MOSFET三點(diǎn)〇安培，60伏特N通道的SOT - 223條第（3A，60V的邏輯電平，?通道，采用SOT - 223封裝的功率MOSFET的）
文件頁數(shù)： 1/6頁
文件大?。?/td> 137K
代理商： NTF3055-100
Publication Order Number:
NTF3055
100/D
Semiconductor Components Industries, LLC, 2006
February, 2006
Rev. 3
1
NTF3055100
Preferred Device
Power MOSFET
3.0 Amps, 60 Volts
N
Channel SOT
223
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
Pb
Free Packages are Available
Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain
to
Source Voltage
V
DSS
60
Vdc
Drain
to
Gate Voltage (R
GS
= 10 M )
V
DGR
60
Vdc
Gate
to
Source Voltage
Continuous
Non
repetitive (t
p
≤
10 ms)
V
GS
±
20
±
30
Vdc
Vpk
Drain Current
Continuous @ T
A
= 25
°
C
Continuous @ T
A
= 100
°
C
Single Pulse (t
p
≤
10 s)
I
D
I
D
I
DM
3.0
1.4
9.0
Adc
Apk
Total Power Dissipation @ T
A
= 25
°
C (Note 1)
Total Power Dissipation @ T
A
= 25
°
C (Note 2)
Derate above 25
°
C
P
D
2.1
1.3
0.014
W
W
W/
°
C
Operating and Storage Temperature Range
T
J
, T
stg
55
to 175
°
C
Single Pulse Drain
to
Source Avalanche
Energy
Starting T
J
= 25
°
C
(V
DD
= 25 Vdc, V
GS
= 10 Vdc,
I
L
(pk) = 7.0 Apk, L = 3.0 mH, V
DS
= 60 Vdc)
E
AS
74
mJ
Thermal Resistance
Junction
to
Ambient (Note 1)
Junction
to
Ambient (Note 2)
R
JA
R
JA
72.3
114
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 1
″
pad size, 1 oz.
(Cu. Area 1.127 sq in).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2
2.4 oz. (Cu. Area 0.272 sq in).
D
G
S
1
2
3
4
3.0 A, 60 V
R
DS(on)
= 110 m
N
Channel
Device
Package
Shipping
ORDERING INFORMATION
NTF3055
100T1
SOT
223
1000/Tape & Reel
1000/Tape & Reel
SOT
223
CASE 318E
STYLE 3
MARKING
DIAGRAM
& PIN
ASSIGNMENT
Drain
4
NTF3055
100T3
SOT
223
4000/Tape & Reel
NTF3055
100T3LF
SOT
223
4000/Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
http://onsemi.com
NTF3055
100T3G
SOT
223
(Pb
Free)
4000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3055
A
WW
3055
= Assembly Location
= Work Week
= Specific Device Code
= Pb
Free Package
AWW
1
Gate
2
Drain
3
Source
(Note: Microdot may be in either location)
SOT
223
(Pb
Free)
NTF3055
100T1G
相關(guān)PDF資料
PDF描述
NTF3055-160 Power MOSFET 2.0 Amps, 60 Volts N–Channel SOT–223(2A,60V邏輯電平,N通道，SOT-223封裝的功率MOSFET)
NTF3055-160T1 Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223
NTF3055-160T3 Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223
NTF3055-160T3LF Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223
NTF3055L108 Power MOSFET 3.0 A, 60 V, Logic Level N-Channel SOT-223(3A,60V邏輯電平,N通道，SOT-223封裝的功率MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTF3055-100T1 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTF3055-100T1G 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTF3055-100T1G 制造商:ON Semiconductor 功能描述:TRANSISTORMOSFETN-CHANNEL60V V(BR)DSS
NTF3055-100T3 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTF3055-100T3G 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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