參數(shù)資料
型號： NTF3055-100
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223(3A,60V邏輯電平,N通道， SOT-223 封裝的功率MOSFET)
中文描述： 功率MOSFET三點〇安培，60伏特N通道的SOT - 223條第（3A，60V的邏輯電平，?通道，采用SOT - 223封裝的功率MOSFET的）
文件頁數(shù)： 2/6頁
文件大小： 137K
代理商： NTF3055-100
NTF3055
100
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
to
Source Breakdown Voltage
(Note 3)
(V
GS
= 0 Vdc,
I
D
= 250 Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
68
66
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150
°
C)
I
DSS
1.0
10
Adc
Gate
Body Leakage Current
(V
GS
=
±
20 Vdc, V
DS
= 0 Vdc)
I
GSS
±
100
nAdc
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
(Note 3)
(V
DS
= V
GS
,
I
D
= 250 Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
2.0
3.0
6.6
4.0
Vdc
mV/
°
C
Static Drain
to
Source On
Resistance
(Note 3)
(V
GS
= 10 Vdc, I
D
= 1.5 Adc)
R
DS(on)
88
110
m
Static Drain
to
Source On
Resistance
(Note 3)
(V
GS
= 10 Vdc, I
D
= 3.0 Adc)
(V
GS
= 10 Vdc, I
D
= 1.5 Adc, T
J
= 150
°
C)
V
DS(on)
0.27
0.24
0.40
Vdc
Forward Transconductance
(Note 3)
(V
DS
= 8.0 Vdc, I
D
= 1.7 Adc)
g
fs
3.2
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 V,
f = 1.0 MHz)
C
iss
324
455
pF
Output Capacitance
C
oss
35
50
Transfer Capacitance
C
rss
110
155
SWITCHING CHARACTERISTICS
(Note 4)
Turn
On Delay Time
(V
DD
= 30 Vdc, I
= 3.0 Adc,
V
= 10 Vdc,
R
G
= 9.1 ) (Note 3)
t
d(on)
9.4
20
ns
Rise Time
t
r
14
30
Turn
Off Delay Time
t
d(off)
21
45
Fall Time
t
f
13
30
Gate Charge
(V
DS
= 48 Vdc, I
= 3.0 Adc,
GS
= 10 Vdc) (Note 3)
Q
T
10.6
22
nC
Q
1
1.9
Q
2
4.2
SOURCE
DRAIN DIODE CHARACTERISTICS
Forward On
Voltage
(I
S
= 3.0 Adc, V
GS
= 0 Vdc)
(I
S
= 3.0 Adc, V
GS
= 0 Vdc,
T
J
= 150
°
C) (Note 3)
V
SD
0.89
0.74
1.0
Vdc
Reverse Recovery Time
(I
S
= 3.0 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ s) (Note 3)
t
rr
30
ns
t
a
22
t
b
8.6
Reverse Recovery Stored Charge
Q
RR
0.04
C
3. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2.0%.
4. Switching characteristics are independent of operating junction temperatures.
相關(guān)PDF資料
PDF描述
NTF3055-160 Power MOSFET 2.0 Amps, 60 Volts N–Channel SOT–223(2A,60V邏輯電平,N通道，SOT-223封裝的功率MOSFET)
NTF3055-160T1 Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223
NTF3055-160T3 Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223
NTF3055-160T3LF Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223
NTF3055L108 Power MOSFET 3.0 A, 60 V, Logic Level N-Channel SOT-223(3A,60V邏輯電平,N通道，SOT-223封裝的功率MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTF3055-100T1 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTF3055-100T1G 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTF3055-100T1G 制造商:ON Semiconductor 功能描述:TRANSISTORMOSFETN-CHANNEL60V V(BR)DSS
NTF3055-100T3 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTF3055-100T3G 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*