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參數(shù)資料
| 型號(hào)： | NTF3055-160T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223 |
| 中文描述： | 2 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261 |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 55K |
| 代理商： | NTF3055-160T1 |
Publication Order Number:
NTF3055–160/D
Semiconductor Components Industries, LLC, 2001
July, 2001 – Rev. 0
1
NTF3055-160
Preferred Device
Power MOSFET
2.0 Amps, 60 Volts
N–Channel SOT–223
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
60
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage
– Continuous
– Non–repetitive (tp
≤
10 ms)
60
Vdc
±
20
±
30
Vdc
Vpk
Drain Current
– Continuous @ TA = 25
°
C
– Continuous @ TA = 100
°
C
– Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation @ TA = 25
°
C (Note 1.)
Total Power Dissipation @ TA = 25
°
C (Note 2.)
Derate above 25
°
C
ID
ID
IDM
2.0
1.2
6.0
Adc
Apk
PD
2.1
1.3
0.014
W
W
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
–55 to
175
°
C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25
°
C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL(pk) = 6.0 Apk, L = 10 mH, VDS = 60 Vdc)
Thermal Resistance
– Junction to Ambient (Note 1.)
– Junction to Ambient (Note 2.)
EAS
65
mJ
R
θ
JA
R
θ
JA
TL
72.3
114
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
1. When surface mounted to an FR4 board using 1
″
pad size,
(Cu. Area 1.127 in2).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2–2.4 oz. (Cu. Area 0.272 in2).
260
°
C
D
G
S
1
2
3
4
2.0 AMPERES
60 VOLTS
RDS(on) = 160 m
N–Channel
Device
Package
Shipping
ORDERING INFORMATION
NTF3055–160T1
SOT–223
1000 Tape & Reel
SOT–223
CASE 318E
STYLE 3
http://onsemi.com
MARKING
DIAGRAM
5160
LWW
5160
L
WW
= Device Code
= Location Code
= Work Week
PIN ASSIGNMENT
3
Source
2
1
4
Gate
Drain
Drain
NTF3055–160T3
SOT–223
4000 Tape & Reel
NTF3055–160T3LF
SOT–223
4000 Tape & Reel
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTF3055-160T3 | Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223 |
| NTF3055-160T3LF | Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223 |
| NTF3055L108 | Power MOSFET 3.0 A, 60 V, Logic Level N-Channel SOT-223(3A,60V邏輯電平,N通道，SOT-223封裝的功率MOSFET) |
| NTF3055L175 | Power MOSFET 2.0 A, 60 V, Logic Level N-Channel SOT-223(2A,60V邏輯電平,N通道，SOT-223封裝的功率MOSFET) |
| NTGD1100 | 8V,±3.3A,Load Switch with Level Shift,P Channel,TSOP6 Power MOSFET(8V,±3.3A,P溝道功率MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTF3055-160T3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTF3055-160T3LF | 功能描述:MOSFET N-CH 60V 2A SOT223 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| NTF3055L108 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 |
| NTF3055L108/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 3.0 Amps， 60 Volts， Logic Level |
| NTF3055L108D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 |
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