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參數(shù)資料
| 型號： | NTE486 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor RF High Frequency Amplifier |
| 中文描述： | 硅NPN晶體管高頻射頻放大器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 23K |
| 代理商： | NTE486 |
NTE486
Silicon NPN Transistor
RF High Frequency Amplifier
Description:
The NTE486 is a silicon NPN high frequency RF transistor in a TO39 type package designed for use
in 12.5V UHF large–signal applications required in industrial equipment.
Features:
Specified 12.5V, 470MHz Characteristics:
Output Power = 0.75W
Minimum Gain = 8dB
Effeciency = 50%
S Parameter Data from 100MHz to 1GHz
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Total Device Dissipation (T
C
= +25
°
C), P
D
Derate Above 25
°
C
Storage Temperature Range, T
stg
20V
35V
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150mA
2.5W
14.3mW/
°
C
–65
°
to +200
°
C
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEO
I
C
= 5mA, I
B
= 0
I
C
= 100
μ
A, I
E
= 0
I
E
= 100
μ
A, I
C
= 0
V
CE
= 15V, I
B
= 0
20
–
–
V
Collector–Base Breakdown Voltage
35
–
–
V
Emitter–Base Breakdown Voltage
4
–
–
V
μ
A
Collector Cutoff Current
–
–
10
ON Characteristics
DC Current Gain
h
FE
V
CE
= 10V, I
C
= 50mA
I
C
= 50mA, I
B
= 5mA
20
60
150
Collector–Emitter Saturation Voltage
V
CE(sat)
–
–
0.5
V
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