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參數(shù)資料
| 型號： | NTE488 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor RF Power Output |
| 中文描述： | 硅NPN晶體管射頻輸出功率 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 21K |
| 代理商： | NTE488 |
NTE488
Silicon NPN Transistor
RF Power Output
Description:
The NTE488 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power
Amplifiers on VHF band mobile radio applications.
Features:
High Power Gain: G
pe
≥
10.7dB @ V
CC
= 13.5V, P
O
= 3.5W, f = 175MHz
TO39 Metal Sealed Package for High Reliability
Emitter Electrode is Connected Electrically to the Case
Application:
1 to 3 Watt Power Amplifiers in VHF Band Mobile Radio Applications.
Absolute Maximum Ratings:
(T
C
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
T
A
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
j
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, R
thJA
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
35V
4V
1A
1W
10W
+175
°
C
–65
°
to +175
°
C
150
°
C/W
15
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Emitter–Base Breakdown Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Symbol
V
(BR)EBO
V
(BR)CBO
I
C
= 10mA, I
E
= 0
V
(BR)CEO
I
C
= 50A, R
BE
=
∞
Test Conditions
Min
4
35
17
Typ
–
–
–
Max
–
–
–
Unit
V
V
V
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