參數(shù)資料
型號： NTE489
廠商： NTE Electronics, Inc.
英文描述： Silicon P-Channel JFET Transistor General Purpose AF Amplifier
中文描述： 硅P溝道場效應晶體管放大器通用自動對焦
文件頁數(shù)： 1/2頁
文件大小： 21K
代理商： NTE489
NTE489
Silicon P–Channel JFET Transistor
General Purpose AF Amplifier
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Gate–Drain Voltage (Note 1), V
GD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Source Voltage (Note 1), V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current, I
G
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16” from case for 10sec), T
L
Note 1. Geometry is symmetrical. Units may be operated with source and drain leads interchanged.
30V
30V
–50mA
360mW
3.27mW/
°
C
–55
°
to +135
°
C
–55
°
to +150
°
C
+300
°
C
. . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics
Gate–Source Breakdown Voltage
V
(BR)GSS
I
G
= 1
μ
A, V
DS
= 0
I
GSS
V
GS
= 20V, V
DS
= 0, Note 2
V
GS(off)
I
D
= –1nA, V
DS
= –15V
I
G
I
D
= –2mA, V
DG
= –15V, Note 2
I
DSS
V
DS
= –15V, V
GS
= 0
30
–
–
V
Gate Reverse Current
–
–
200
pA
Gate–Source Cutoff Voltage
0.5
–
2.0
V
Gate Current
–
15
–
pA
Saturation Drain Current
–2
–
–15
mA
Dynamic Characteristics
Common–Source Forward
Transconductance
Common–Source Output Conductance
g
fs
V
DS
= –15V, V
GS
= 0, f = 1kHz,
Note 3
V
DS
= –15V, V
GS
= 0, f = 1kHz
V
DS
= –15V, V
GS
= 0, f = 1MHz
V
DS
= –15V, V
GS
= 0, f = 1MHz
6000
–
15000
μ
mho
g
os
C
iss
C
rss
–
–
200
μ
mho
Common–Source Input Capacitance
–
32
–
pF
Common–Source Reverse Transfer
Capaticance
–
4
–
pF
Equivalent Short–Circuit Input Noise
Voltage
e
n
V
DS
= –10V, I
D
= –2mA, f = 1kHz
–
6
–
nV
Hz
Note 2. Approximately doubles for every 10
°
C increase in T
A
.
Note 3. Pulse test duration = 2ms.
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