參數(shù)資料
型號： NTE490
廠商： NTE Electronics, Inc.
英文描述： MOSFET N-Ch, Enhancement Mode High Speed Switch
中文描述： MOSFET的N溝道，增強模式高速開關(guān)
文件頁數(shù)： 1/2頁
文件大小： 20K
代理商： NTE490
NTE490
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, V
DS
Gate–Source Voltage, V
GS
Drain Current (Note 1), I
D
Total Device Dissipation (T
A
= +25
°
C), P
D
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Note 1. The Power Dissipation of the package may result in a lower continuous drain current.
60V
±
20V
500mA
350mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55
°
to +150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Drain–Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0, I
D
= 100
μ
A
I
GSS
V
GS
= 15V, V
DS
= 0
60
90
–
V
Gate Reverse Current
–
0.01
10
nA
ON Characteristics
(Note 2)
Gate Threshold Voltage
V
GS(Th)
r
DS
(on)
I
D(off)
g
fs
V
DS
= V
GS
, I
D
= 1mA
V
GS
= 10V, I
D
= 200mA
V
DS
= 25V, V
GS
= 0
V
DS
= 10V, I
D
= 250mA
0.8
2.0
3.0
V
μ
A
Static Drain–Source ON Resistance
–
1.8
5.0
Drain Cutoff Current
–
–
0.5
Forward Transconductance
–
200
–
mmhos
Small–Signal Characteristics
Input Capacitance
C
iss
V
DS
= 10V, V
GS
= 0, f = 1MHz
–
–
60
pF
Switching Characteristics
Turn–On Time
t
on
t
off
I
D
= 200mA
I
D
= 200mA
–
4
10
ns
Turn–Off Time
–
4
10
ns
Note 2. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
相關(guān)PDF資料
PDF描述
NTE491 MOSFET N-Ch, Enhancement Mode High Speed Switch
NTE492 MOSFET N-Ch, Enhancement Mode High Speed Switch
NTE4961 Surge Clamping, Transient Overvoltage Suppressor Bidirectional
NTE4903 Surge Clamping, Transient Overvoltage Suppressor Bidirectiona
NTE4905 Surge Clamping, Transient Overvoltage Suppressor Bidirectional
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTE4900 制造商:NTE Electronics 功能描述:TRANS SUPP 5.0V 制造商:NTE Electronics 功能描述:IC TRANSIENT PROTECT 制造商:NTE Electronics 功能描述:TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,5V V(RWM),Axial-9 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Diode TVS Single Uni-Dir 5V 1.5KW 2-Pin
NTE4901 制造商:NTE Electronics 功能描述:TRANS SUPP 6.0V BI-DIR 制造商:NTE Electronics 功能描述:6V 1500W BIDIR TVS 制造商:NTE Electronics 功能描述:Diode TVS Single Uni-Dir 5V 1.5KW 2-Pin
NTE4902 制造商:NTE Electronics 功能描述:TRANS SUPP 5.8V UNIDIR 制造商:NTE Electronics 功能描述:6.8V 1500W UDIR TVS 制造商:NTE Electronics 功能描述:TVS DIODE, 1.5KW, 5.8V; TVS Polarity:Unidirectional; Reverse Stand-Off Voltage Vrwm:5.8V; Breakdown Voltage Min:6.45V; Breakdown Voltage Max:7.14V; Clamping Voltage Vc Max:10.5V; Peak Pulse Current Ippm:143A; No. of Pins:2 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Diode TVS Single Uni-Dir 5.8V 1.5KW 2-Pin
NTE4903 制造商:NTE Electronics 功能描述:6.8V 1500W BIDIR TVS 制造商:NTE Electronics 功能描述:Diode TVS Single Bi-Dir 5.5V 1.5KW 2-Pin
NTE4904 制造商:NTE Electronics 功能描述:TVS DIODE, 1.5KW, 6.4V; TVS Polarity:Unidirectional; Reverse Stand-Off Voltage Vrwm:6.4V; Breakdown Voltage Min:7.13V; Breakdown Voltage Max:7.88V; Clamping Voltage Vc Max:11.3V; Peak Pulse Current Ippm:132A; No. of Pins:2 制造商:NTE Electronics 功能描述:Diode TVS Single Uni-Dir 6.4V 1.5KW 2-Pin
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*