參數(shù)資料
型號(hào)： NTE492
廠商： NTE Electronics, Inc.
英文描述： MOSFET N-Ch, Enhancement Mode High Speed Switch
中文描述： MOSFET的N溝道，增強(qiáng)模式高速開關(guān)
文件頁數(shù)： 1/2頁
文件大?。?/td> 21K
代理商： NTE492
NTE492
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, V
DS
Gate–Source Voltage, V
GS
Drain Current, I
D
Continuous (Note 1)
Pulsed (Note 2)
Total Device Dissipation (T
A
= +25
°
C), P
D
Derate above 25
°
C
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Note 1. The Power Dissipation of the package may result in a lower continuous drain current.
Note 2. Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
200V
±
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
250mA
500mA
350mW
2.8mW/
°
C
–55
°
to +150
°
C
–55
°
to +150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
OFF Characteristics
Zero–Gate–Voltage Drain Current
Drain–Source Breakdown Voltage
Gate Reverse Current
ON Characteristics
(Note 2)
Gate Threshold Voltage
Static Drain–Source ON Resist-
ance
Symbol
Test Conditions
Min
Typ Max
Unit
I
DSS
V
DS
= 130V, V
GS
= 0
V
(BR)DSX
V
GS
= 0, I
D
= 100
μ
A
I
GSS
V
GS
= 15V, V
DS
= 0
–
–
–
30
–
nA
V
nA
200
–
0.01 10.0
V
GS(Th)
r
DS(on)
I
D
= 1mA, V
DS
= V
GS
V
GS
= 10V, I
D
= 100mA
1.0
–
–
3.0
6.0
V
4.5
V
GS
= 10V, I
D
= 250mA
–
4.8
6.4
Small–Signal Characteristics
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Forward Transconductance
C
iss
C
rss
C
oss
g
fs
V
DS
= 25V, V
GS
= 0, f = 1MHz
V
DS
= 25V, V
GS
= 0, f = 1MHz
V
DS
= 25V, V
GS
= 0, f = 1MHz
V
DS
= 25V, I
D
= 250mA
–
–
–
60
6.0
30
400
–
–
–
–
pF
pF
pF
200
mmhos
Note 2. Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
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