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參數(shù)資料
| 型號： | NTE484 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor RF Power Output for Mobile Use, PO = 25W @ 947MHz |
| 中文描述： | 硅NPN晶體管輸出功率為移動使用，保\u003d 25瓦@ 947MHz |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | NTE484 |
NTE484
Silicon NPN Transistor
RF Power Output for Mobile Use,
P
O
= 25W @ 947MHz
Description:
The NTE484 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz
mobile communications. This device is internally input matched in the common base configuration
for extremely broadband performance and optimum gain characteristics.
Features:
Designed for 800 MHz Mobile Communications Equipment
25W Min., with Greater than 5dB Gain at 836MHz
Withstands Infinite VSWR at Rated Operating Conditions
Internal Input matched “Tuned Q”
Common Base Configuration
Absolute Maximum Ratings:
(T
C
= +25
°
C unless othrwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (At +25
°
C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
36V
16V
4V
10A
75W
+200
°
C
–65
°
to +150
°
C
2.3
°
C/W
Electrical Characteristic:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CES
h
FE
I
C
= 50mA, I
B
= 0, Note 1
I
C
= 50mA, V
BE
= 0, Note 1
I
E
= 10mA, I
C
= 0
V
CE
= 15V, V
BE
= 0
V
CE
= 6V, I
C
= 1A
16
–
–
V
36
–
–
V
Emitter–Base Breakdown Voltage
4
–
–
V
Collector Cutoff Current
–
–
10
mA
DC Current Gain
20
–
–
Note 1. Pulsed through 25mH indicator.
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