參數(shù)資料
型號(hào): NTE46
廠商: NTE Electronics, Inc.
英文描述: Silicon NPN Transistor Darlington, General Purpose Amplifier, Preamp, Driver
中文描述: 硅NPN晶體管達(dá)林頓,通用放大器,前置放大器,驅(qū)動(dòng)器
文件頁(yè)數(shù): 1/2頁(yè)
文件大小: 23K
代理商: NTE46
NTE46
Silicon NPN Transistor
Darlington, General Purpose Amplifier,
Preamp, Driver
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CES
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Total Device Dissipation (T
A
= +25
°
C), P
D
Derate Above 25
°
C
Total Device Dissipation (T
C
= +25
°
C), P
D
Derate Above 25
°
C
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction to Case, R
Θ
JC
Thermal Resistance, Junction to Ambient, R
Θ
JA
100V
100V
12V
500mA
625mW
5mW/
°
C
1.5W
12mW/
°
C
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–55
°
to +150
°
C
–55
°
to +150
°
C
83.3
°
C/W
200
°
C/W
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
OFF Characteristics
Collector–Emitter Breakdown
Voltage
Collector–Base Breakdown Voltage
V
(BR)CBO
I
C
= 100
μ
A, I
E
= 0
Emitter–Base Breakdown Voltage
V
(BR)EBO
I
E
= 10
μ
A, I
C
= 0
Collector Cutoff Voltage
Test Conditions
Min
Typ
Max
Unit
V
(BR)CES
I
C
= 100
μ
A, V
BE
= 0
100
V
100
12
V
V
nA
nA
nA
I
CBO
I
CES
I
EBO
V
CB
= 80V, I
E
= 0
V
CE
= 80V, V
BE
= 0
V
BE
= 10V, I
C
= 0
100
500
100
Emitter Cutoff Current
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