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參數(shù)資料
| 型號： | NTE476 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor RF Power Output |
| 中文描述： | 硅NPN晶體管射頻輸出功率 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 22K |
| 代理商： | NTE476 |
NTE476
Silicon NPN Transistor
RF Power Output
Description:
The NTE476 is a silicon epitaxial NPN–planar transistor which employs a multi–emitter electrode de-
sign. This feature together with a heavily diffused base matrix located between the individual emitters
result in high RF current handling capability, high power gain, low base resistance and low output ca-
pacitance. This device is intended for use as a Class A, B or C amplifier and in oscillator and frequency
multiplier circuits.
Features:
Designed for VHF mobile and marine transmitters
High efficiency at maximum stability
Improved metallization to achieve extreme ruggedness
Absolute Maximum Ratings:
(T
A
= +25
°
C except where specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
max
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Dissipation at 25
°
C Stud, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Stud, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
36V
18V
4V
3A
23.2W
7.54
°
C/W
–65
°
to 200
°
C
–65
°
to 200
°
C
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
C
= 200mA, I
B
= 0, Note 1
I
C
= 500
μ
A, I
E
= 0
I
E
= 2mA, I
C
= 0
V
CB
= 15V, I
E
= 0
18
–
–
V
Collector–Base Breakdown Voltage
36
–
–
V
Emitter–Base Breakdown Voltage
4
–
–
V
Collector Cutoff Current
–
–
0.25
mA
Dynamic Characteristics
Current Gain – Bandwidth Product
f
T
I
C
= 100mA, V
CE
= 13.6V
V
CB
= 13.6V, I
E
= 0, f = 100kHz
–
350
–
MHz
Output Capacitance
C
ob
–
–
45
pF
Functional Tests
Power Output
Power Gain (Class C)
P
OUT
P
g
η
V
CE
= 13.6V, f = 175MHz
12
–
–
W
4.77
–
–
dB
Collector Efficiency (Class C)
80
–
–
%
Note 1. Pulsed thru a 25mH inductor.
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