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參數(shù)資料
| 型號： | NTE4828 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Surge Clamping, Transient Overvoltage Suppressor Unidirectional |
| 中文描述： | 浪涌夾緊，單向暫態(tài)過電壓抑制器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 21K |
| 代理商： | NTE4828 |
NTE4828 thru NTE4868
Surge Clamping, Transient Overvoltage Suppressor
Unidirectional
Description:
The NTE4800 Series of high power transient suppressors are Silicon PN Junction devices designed
for absorbtion of high voltage transients associated with power disturbances, switching and induced
lighting effects. These devices were designed to be used on the output of switching power supplies
and may be used to replace crowbar circuits.
They are able to withstand high levels of peak current while allowing a circuit breaker to trip of a fuse
to blow before shorting. This will enable the user to reset the breaker or replace the fuse and continue
operation. For this type of operation, it is recommended that a sufficient mounting surface be used
for dissipating the heat generated by the device during the transient or overvoltage condition.
Features:
Glass Passivated Junction
5000W Peak Pulse Power Capability on 10/1000
μ
s Waveform
Repetition Rate (Duty Cycle): 0.05%
Low Incremental Surge Resistance
Fast Response Time
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Minimum Peak Puse Power Dissipation (10/1000
μ
s Waveform, Note 1), P
PPM
Peak Pulse Current (10/1000
μ
s Waveform, Note 1), I
PPM
Steady State Power Dissipation (T
L
= +75
°
C, Lead Length .375” (9.5mm), Note 2), P
M(AV)
Peak Forward Surge Current, I
FSM
(8.3ms Single Half Sine–Wave Superimposed on Rated Load, Note 3)
Instantaneous Forward Voltage (I
F
= 100A, Note 3), V
F
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, .375” (9.5mm) Lead Length, 10sec ), T
L
Note 1. Non–repetitive current pulse, dereated above T
A
= +
°
C.
Note 2. Mounted on Copper Leaf area of 0.79in
2
(20mm
2
).
Note 3. Measured on 8.3ms single half sine–wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum.
5000W
See Table
. . .
. . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . .
8W
400A
3.5V
. . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55
°
to +175
°
C
–55
°
to +175
°
C
. . . . . . . . . .
+300
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTE4868 | Surge Clamping, Transient Overvoltage Suppressor Unidirectional |
| NTE1773 | 3 Pin 1.5A Adjustable Negative Voltage Regulator 3-PFM 0 to 125 |
| NTE483 | Silicon NPN Transistor RF Power Output for Mobile Use, PO = 18W @ 866MHz |
| NTE484 | Silicon NPN Transistor RF Power Output for Mobile Use, PO = 25W @ 947MHz |
| NTE486 | Silicon NPN Transistor RF High Frequency Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTE483 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Silicon NPN Transistor RF Power Output for Mobile Use, PO = 18W @ 866MHz |
| NTE484 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Silicon NPN Transistor RF Power Output for Mobile Use, PO = 25W @ 947MHz |
| NTE4840 | 制造商:NTE Electronics 功能描述:DIODE SURGE CLAMPING UNIDIRECTIONAL 5000W VR=24V |
| NTE4846 | 制造商:NTE Electronics 功能描述:DIODE SURGE CLAMPING UNIDIRECTIONAL 5000W VR=30V |
| NTE4848 | 制造商:NTE Electronics 功能描述:DIODE SURGE CLAMPING UNIDIRECTIONAL 5000W VR=33V |
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