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參數(shù)資料
| 型號： | NTE480 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz |
| 中文描述： | 硅NPN晶體管輸出功率寬帶放大器，保\u003d功率40W @ 512MHz |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 22K |
| 代理商： | NTE480 |
NTE480
Silicon NPN Transistor
RF Power Output for Broadband Amp,
P
O
= 40W @ 512MHz
Description:
The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband
applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resis-
tors to withstand infinite VSWR under operating conditions.
Features:
Designed for UHF Commercial Equipment
38W with Greater than 5.8dB Gain
Withstands 20:1 VSWR Min., All Phase Angles
Tuned Q Technology
Diffused Emitter Resistors
Absolute Maximum Ratings:
(T
C
= +25
°
C unless othrwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (At +25
°
C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
36V
16V
4V
8A
117W
+200
°
C
–65
°
to +150
°
C
1.5
°
C/W
Electrical Characteristic:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CES
h
FE
I
C
= 50mA, I
B
= 0, Note 1
I
C
= 15mA, V
BE
= 0, Note 1
I
E
= 5mA, i
C
= 0
V
CE
= 12.5V, V
BE
= 0
V
CE
= 5V, I
C
= 1A
16
–
–
V
36
–
–
V
Emitter–Base Breakdown Voltage
4
–
–
V
Collector Cutoff Current
–
–
5
mA
DC Current Gain
20
–
–
Note 1. Pulsed through 25mH indicator.
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