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參數(shù)資料
| 型號： | NTE478 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor RF Power Output, PO = 100W @ 175MHz |
| 中文描述： | 硅NPN晶體管射頻輸出功率，保\u003d 100瓦@ 175MHz時 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 22K |
| 代理商： | NTE478 |
NTE478
Silicon NPN Transistor
RF Power Output, P
O
= 100W @ 175MHz
Description:
The NTE478 is a 12.5 Volt epitaxial silicon NPN planar transistor designed primarily for VHF commu-
nications. This device utilizes diffused emitter resistors to achieve infinite VSWR under operating
conditions, and is internally input matched to optimize power gain and efficiency over the band.
Features:
Designed for VHF Military and Commercial Equipment
100W Min with Greater than 6.0dB Gain
Withstands Infinite VSWR under Operating Conditions
Low Intermodulation Distortion (–32dB)
Diffused Emitter Resistors
Absolute Maximum Ratings:
(T
C
= +25
°
C unless othrwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (At +25
°
C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
36V
18V
4V
20A
270W
+200
°
C
–65
°
to +150
°
C
65
°
C/W
Electrical Characteristic:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
h
FE
I
C
= 100mA, I
B
= 0, Note 1
I
C
= 100mA, V
BE
= 0, Note 1
I
E
= 10mA, i
C
= 0
V
CB
= 12V, I
E
= 0
V
CE
= 6V, I
C
= 5A
18
–
–
V
36
–
–
V
Emitter–Base Breakdown Voltage
4
–
–
V
Collector Cutoff Current
–
–
10
mA
DC Current Gain
10
–
–
Note 1. Pulsed through 25mH indicator.
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