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參數(shù)資料
| 型號： | NTE470 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor RF Power Output |
| 中文描述： | 硅NPN晶體管射頻輸出功率 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 24K |
| 代理商： | NTE470 |
NTE470
Silicon NPN Transistor
RF Power Output
Description:
The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application
as a high–power linear amplifier from 2.0 to 30MHz.
Features:
Specified 12.5V, 30MHz Characteristics:
Output Power =
Minimum Gain =
Efficiency
Intermodulation Distortion @ 100W (PEP): IMD = –30dB Min
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
100W (PEP)
10dB
40%
=
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Withstand Current (10s)
Total Device Dissipation (T
C
= +25
°
C), P
D
Derate Above 25
°
C
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
thJC
20V
45V
3V
20A
30A
290W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.66W/
°
C
–65
°
to +150
°
C
0.6
°
C/W
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CES
I
C
= 50mA, I
B
= 0
I
C
= 200mA, V
BE
= 0
I
C
= 200mA, I
E
= 0
I
E
= 10mA, I
C
= 0
V
CE
= 16V, V
BE
= 0, T
C
= +25
°
C
20
–
–
V
45
–
–
V
Collector–Base Breakdown Voltage
45
–
–
V
Emitter–Base Breakdown Voltage
3
–
–
V
Collector Cutoff Current
–
–
10
mA
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