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參數(shù)資料
| 型號(hào)： | NTE472 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor RF Power Output PO = 1.8W @ 175MHz |
| 中文描述： | 硅NPN晶體管輸出功率保\u003d 1.8W的@ 175MHz時(shí) |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 21K |
| 代理商： | NTE472 |
NTE472
Silicon NPN Transistor
RF Power Output
P
O
= 1.8W @ 175MHz
Description:
The NTE472 is a silicon NPN transistor designed for amplifier, frequency multiplier or oscillator ap-
plications in military, mobile marine and citizens band equipment. Suitable for use as output driver
or pre–driver stages in VHF and UHF equipment.
Features:
Specified 12.5 Volt, 175MHz Characteristics:
Output Power = 1.75 Watts
Minimum Gain = 11.5dB
Efficiency = 50%
Characterized through 225MHz
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Total Device Dissipation (T
C
= +75
°
C , Note 1), P
D
Derate Above 75
°
C
Storage Temperature Range, T
stg
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as a class B or C RF amplifier.
16V
36V
3.5V
0.33A
3.5W
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
28mW/
°
C
–65
°
to +200
°
C
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CEO
I
C
= 25mA, I
B
= 0
I
C
= 25mA, V
BE
= 0
I
C
= 0.5mA, I
C
= 0
V
CE
= 10V, I
B
= 0
16
–
–
V
36
–
–
V
Emitter–Base Breakdown Voltage
3.5
–
–
V
Collector Cutoff Current
–
–
0.3
mA
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參數(shù)描述 |
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